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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsAkihisa Yoshida, Masatoshi Kitagawa, Masao Uchida, Makoto Kitabatake, Tsuneo Mitsuyu
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An impurity doped SiC substrate 1 and SiC thin film 2 are irradiated with a laser light 5 having a wavelength longer than such a wavelength that a band edge absorption of a semiconductor is caused. The wavelength of the laser light 5 may be such a wavelength that an absorption is caused by a vibration by the bond of an impurity element and an element constituting the semiconductor, for example, a wavelength of 9 μm to 11 μm. Specifically, in the case where Al is doped in SiC, the wavelength of the laser light 5 may be within the range of 9.5 μm to 10 μm.
A method of activating a semiconductor impurity by irradiating a semiconductor comprising a major semiconductor element and an impurity element with a light to activate the impurity element, said light having a wavelength longer than a wavelength causing a band edge absorption of the semiconductor.
An apparatus for activating a semiconductor impurity by irradiating with a light a semiconductor comprising a major semiconductor element and an impurity element to activate the impurity element, said apparatus comprising:
An apparatus for activating a semiconductor impurity by irradiating with a light a semiconductor comprising a major semiconductor element and an impurity element to activate the impurity element, said apparatus comprising:
An apparatus for activating a semiconductor impurity by irradiating with a light a semiconductor comprising a major semiconductor element and an impurity element to activate the impurity element, said apparatus comprising:
Dependencies are inferred from the claim text.