Semiconductor device and method of manufacturing the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasaru Moriwaki, Takayuki Yamada
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Abstract
A semiconductor device comprises a first MOSFET and a second MOSFET. The first MOSFET includes a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness and a first gate electrode composed of a polysilicon film formed on the first gate insulating film. The second MOSFET includes a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness and a second gate electrode composed of a metal film made of a refractory metal or a compound of a refractory metal and formed on the second gate insulating film.
Claims7
A semiconductor device comprising a first FET and a second FET, wherein
- the first FET includes:
- a first gate insulating firm formed on a semiconductor substrate and having a relatively large thickness;
- and
- a first gate electrode composed of a polysilicon film formed on the first gate insulating film and
- the second FET includes;
- a second gate insulating film formed on the semiconductor substrate and having a relatively small thickness;
- and
- a second gate electrode composed of a metal film formed on the second gate insulating film;
- and
- a barrier metal covering the sides and bottom of the first gate electrode formed in between the second gate insulating film and the second gate electrode.
A semiconductor device comprising a first FET and a second FET, wherein
- the first FET includes:
- a first gate insulating film formed on a semiconductor substrate and having a relatively large thickness;
- and
- a first gate electrode composed of a multilayer structure formed on the first gate insulting film, the multilayer structure being composed of a lower-layer polysilicon film and an upper-layer metal film made of a refractory metal or a compound of a refractory metal;
- and
- the second FET includes;
- a second gate insulating film formed on the semiconductor substrate and having relatively small thickness;
- and
- a second gate electrode composed of a metal film formed on the second gate insulating film;
- and
- a barrier metal covering the sides and bottom of the second gate electrode formed in between the second gate insulating film and the second gate electrode.
Dependencies are inferred from the claim text.