US 2001/0026964 A1 · Method of manufacturing semiconductor device

Abstract

In a method of manufacturing a semiconductor device, a first heat treatment for crystallization is conducted after nickel elements are introduced in an amorphous silicon film. Then, after the crystalline silicon film is obtained, a heat treatment is again conducted through the heating method which is identical with the first heat treatment. In this state, HCl or the like is added to the atmosphere to conduct gettering of the nickel elements remaining in the crystalline silicon film. With this process, there can be obtained a crystalline silicon film low in the concentration of the metal elements and high in crystallinity.

Claims11

Dependent claims

A method of fabricating a semiconductor device, said method comprising the steps of:

forming an amorphous semiconductor film on an insulating surface;
introducing a metal material being capable of promoting crystallization of the amorphous semiconductor film;
performing a first heat treatment to crystallize the amorphous semiconductor film at a first temperature;
performing a second heat treatment at a second temperature higher than the first temperature in an atmosphere comprising argon,
wherein the second temperature is in a range of 450-1050° C.,
wherein the crystallized semiconductor film after the second heat treatment includes the metal material at a concentration in a range of 3×1017 cm−3 or less.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/812,284Filed 19 Mar 2001

Priority

JP 7-34782015 Dec 1995

Published

4 Oct 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 14/3808
Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth: using laser beams
H10P 14/3411
Being Group IVA materials: silicon, silicon germanium or germanium
H10P 14/3806
Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth: using crystallisation-enhancing elements
H10P 36/03
Gettering within semiconductor bodies: within silicon bodies

Family

Application08/767,315Continuation · filed 16 Dec 1996

Application09/208,101Continuation · filed 20 Nov 1998

Application09/812,284Continuation · filed 19 Mar 2001

US 5,869,363 ARelated patent

US 6,204,101 B1Related patent

US 2001/0026964 A1This patent

From the US filing history. Foreign family members aren’t listed.

Method of manufacturing semiconductor device

Life of this patent

Method of manufacturing semiconductor device

Life of this patent

Abstract

Claims11