Metode of manufacturing a light emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Takeshi Fukunaga
Life of this patent
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Abstract
To reduce the number of layers of an EL layer so that it can be manufactured at a reduced cost. An electrode (a) (102) and an EL layer (103) are formed on an insulator (101), and the EL layer (103) is subjected to plasma processing. A carrier injection region (104) is formed as a result in a superficial portion of the EL layer (103). An electrode (b) (105) is formed thereon to complete an EL element. The EL layer (103) is high in carrier injection efficiency despite being substantially a single layer.
Claims22
A method of manufacturing a light emitting device, comprising the steps of:
- forming an anode over an insulator;
- forming an EL layer over the anode;
- subjecting the EL layer to plasma processing;
- and
- forming a cathode over the EL layer subjected to the plasma processing.
A method of manufacturing a light emitting device, comprising the steps of:
- forming an anode over an insulator;
- forming an EL layer over the anode;
- and
- forming a cathode over the EL layer, wherein
- the EL layer is formed through a process including forming a first EL film over the anode, subjecting the first EL film to plasma processing, and forming a second EL film over the first EL film subjected to the plasma processing.
A method of manufacturing a light emitting device, comprising the steps of:
- forming a cathode over an insulator;
- forming an EL layer over the cathode;
- subjecting the EL layer to plasma processing;
- and
- forming an anode over the EL layer subjected to the plasma processing.
A method of manufacturing a light emitting device, comprising the steps of:
- forming a cathode over an insulator;
- forming an EL layer over the cathode;
- and
- forming an anode over the EL layer, wherein
- the EL layer is formed through a process including forming a first EL film over the cathode, subjecting the first EL film to plasma processing, and forming a second EL film on the first EL film subjected to the plasma processing.
Dependencies are inferred from the claim text.