Surface emitting semiconductor laser and surface emitting semiconductor laser array

A surface emitting semiconductor laser in which a resonator is formed on a semiconductor substrate in the perpendicular direction, from which laser light is emitted in the direction perpendicular to the semiconductor substrate, comprising:

• a columnar semiconductor deposit comprising at least part of the resonator;
• and
• an insulating layer formed in contact with the side of the semiconductor deposit;
• wherein, assuming that the axes intersecting at right angles through the center of the upper side of the semiconductor deposit are respectively the x-axis and y-axis, the planar configuration of the insulating layer is designed so that the distance between the center and the first intersection point between the x-axis and the side of the insulating layer differs from the distance between the center and the second intersection point between the y-axis and the side of the insulating layer.