Content addressable memory with potentials of search bit line and/or match line set as intermediate potential between power source potential and ground potential

A content addressable memory device comprising:

• a storage bit line pair for reading storage data from and writing storage data to a content addressable memory cell;
• a search bit line pair, wired independently from said storage bit line pair, for providing search data to said content addressable memory cell;
• and
• second means for realizing a smaller swing in the level of a match line by setting a precharge potential of said match line to an intermediate potential between a power source potential and a ground potential, wherein said match line outputs a result of match searching of said storage data for said search data.

A content addressable memory device comprising:

• a storage bit line pair for reading storage data from and writing storage data to a content addressable memory cell;
• a search bit line pair, wired independently from said storage bit line pair, for providing search data to said content addressable memory cell;
• first means for realizing a smaller swing in the level of said search bit line pair by setting the potential of said search bit line pair to an intermediate potential between a power source potential and a ground potential during match searching;
• and
• second means for realizing a smaller swing in the level of a match line by setting a precharge potential of said match line to an intermediate potential between said power source potential and said ground potential, wherein said match line outputs a result of match searching of said storage data for said search data.