Method of simulation of production process of semiconductor device and simulator thereof
AssigneeKabushiki Kaisha Toshiba
InventorsNaoki Kusunoki, Nobuoshi Aoki, Hirotaka Amakawa
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AssigneeKabushiki Kaisha Toshiba
InventorsNaoki Kusunoki, Nobuoshi Aoki, Hirotaka Amakawa
Estimating the term…
Plural boundary points are generated on a string on the surface of a material and a first length of a line segment between the boundary points is obtained. Then, the displacement of the boundary point according to a process model and the boundary point is moved by the displacement. A second length of the line segment between the boundary points after the boundary point is moved is found. When the second length is greater than a value obtained by multiplying the first length by a first factor exceeding 1, a new boundary point is added to the line segment whereas when the second length is smaller than a value obtained by multiplying the first length by a second factor less than 1, one of the boundary points of the line segment is eliminated.
A simulation method comprising:
A simulator comprising:
A program which is executed by a computer, the program comprising:
Dependencies are inferred from the claim text.