Electric Characteristic evaluating apparatus for a semiconductor device
OwnerHiroyoshi Tanimotoinventor
Life of this patent
Estimating the term…
Abstract
The present invention quantitatively estimates how much of each carrier generation and extinction mechanism is contributed to the leak current by a single simulation. Thus, according to the present invention, the time required for evaluating the electric characteristics can be substantially curtailed, and the term and expenses of manufacturing a semiconductor device can be curtailed.
Claims20
An electric characteristic evaluating apparatus for extracting electric characteristics of a semiconductor device by numerically solving physical equations describing physical phenomenon in a semiconductor device comprising:
- an integral value calculator configured to integrate a carrier generation and extinction speed obtained by numerically solving the physical equations, in each carrier generation and extinction mechanism within a semiconductor region, and issue the result obtained by integration respectively.
An electric characteristic evaluating method for extracting electric characteristics of a semiconductor device by numerically solving physical equations describing physical phenomenon in a semiconductor device comprising the steps of:
- integrating a carrier generation and extinction speed obtained by numerically solving the physical equations, in each carrier generation and extinction mechanism within a semiconductor region;
- and
- issuing the result obtained by integration respectively.
An electric characteristic evaluating program for extracting electric characteristics of a semiconductor device by numerically solving physical equations describing physical phenomenon in a semiconductor device comprising and making a computer system execute the process of:
- an integral value calculating process of integrating a carrier generation and extinction speed obtained by numerically solving the physical equations, in each carrier generation and extinction mechanism within a semiconductor region, and issuing the result obtained by integration respectively.
A semiconductor device manufacturing method for extracting electric characteristics of a semiconductor device by numerically solving physical equations describing physical phenomenon in a semiconductor device, determining the manufacturing condition of semiconductor device from the extracted electric characteristics, and manufacturing the semiconductor device on the basis of the determined manufacturing condition comprising the steps of:
- integrating a carrier generation and extinction speed obtained by numerically solving the physical equations, in each carrier generation and extinction mechanism within a semiconductor region, and issuing the result obtained by integration respectively;
- and
- determining the manufacturing condition of the semiconductor device having the desired electric characteristics on the basis of the result obtained by integration.
Dependencies are inferred from the claim text.