Simplified etching technique for producing multiple undercut profiles

A simplified etch process capable of generating selected undercut profiles in a work piece, comprising the steps of:

• performing a first wet etch of portions of said work piece to create a first undercut in said work piece;
• forming a polymer film over side surfaces of said first undercut to inhibit further etching of said first undercut during subsequent etching operations;
• and
• performing a second wet etch of portions of said work piece to create a second undercut in said work piece.

A method used in the manufacture of a flat panel field emission display, comprising:

• forming a resist pattern over a field emission display base structure, said base structure including a plurality of material layers arranged on a substrate, wherein at least a first material layer and a second material layer are formed of the same material, said resist pattern having a plurality of apertures which define portions of said base structure which are to be etched;
• etching said first material layer at the portions of said base structure defined by said apertures with an etching process which creates an undercut in said first material layer;
• etching the portions of said base structure defined by said apertures with a polymerizing etch process which forms a polymer film at the undercut in said first material layer;
• etching said second material layer at the portions of said base structure defined by said apertures with an etching process which creates an undercut in said second material layer;
• removing said polymer film;
• and
• removing said resist pattern.

A method of processing a semiconductor device, comprising:

• defining a non-horizontal surface of a first material within said semiconductor device;
• exposing said semiconductor device to a first material-etching substance;
• and
• protecting said non-horizontal surface from said substance.

A method of profiling a semiconductor device including a material, comprising:

• providing a patterned mask over said material;
• performing a first etch of said material while guiding said first etch with said mask;
• adding a polymer to an etched portion of said material;
• and
• performing a second etch of said material while guiding said second etch with said mask and said polymer.

A method of producing multiple undercut profiles within a semiconductor device, comprising:

• defining a plurality of levels within said semiconductor device using a plurality of etches;
• generating a polymer on a side of at least one of said plurality of levels after at least one etch of said plurality of etches;
• and
• performing at least one etch of said plurality of etches after said step of generating a polymer.

A method of establishing different degrees of undercutting of a layer of a semiconductor device, comprising:

• undercutting said layer of said semiconductor device a first time;
• depositing a polymer along an undercut portion of said layer;
• and
• undercutting said layer a second time.

A method of forming a semiconductor device on a substrate, comprising:

• providing a bottom portion of a dielectric over said substrate;
• providing a top portion of a dielectric over said bottom portion;
• exposing said top portion to a first undercutting ambient;
• and
• exposing said bottom portion to a second undercutting ambient while protecting said top portion from said second undercutting ambient.

A method of developing an emitter site including an emitter covered with a first dielectric layer and flanked by a conductive layer generally covering said first dielectric layer, wherein a second dielectric layer and an overlying layer cover said first dielectric layer and said conductive layer, and wherein said method comprises:

• causing said second dielectric layer to define a recession under said overlying layer;
• at least partially filling said recession with an etch protectant;
• and
• causing said first dielectric layer to define a recession under said conductive layer at said emitter site.

A method of etching a material included within a semiconductor device, comprising:

• providing an etch-guiding layer over said material included within said semiconductor device;
• defining a first sidewall within said material under said etch-guiding layer;
• providing an etch-guiding liner on said first sidewall;
• and
• defining a second sidewall within said material under said etch-guiding liner.

A method of generating a plurality of etch profiles in a semiconductor device covered by a mask, comprising:

• etching a first perimeter from said semiconductor device through a first opening in said mask;
• etching a second perimeter under said first perimeter;
• and
• generally retaining said first perimeter while etching said second perimeter.

A method of producing a semiconductor device, comprising:

• wet etching said semiconductor device;
• reducing an effect of a subsequent wet etch on said semiconductor device;
• and
• subsequently wet etching said semiconductor device.

A method of profiling a semiconductor device, comprising:

• providing a material between an upper layer and a lower layer as part of said semiconductor device;
• defining a first hole in said upper layer having a first diameter;
• defining a second hole in said material that is generally concentric to said first hole and has a second diameter larger than said first diameter;
• plugging an area of said second hole between said first diameter and said second diameter with a carbonaceous polymer;
• and
• defining a third hole in said lower layer.