Semiconductor integrated circuit device and manufacturing method of that
AssigneeHitachi, Ltd.
InventorToshio Miyamoto
Life of this patent
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Abstract
A laser beam is irradiated onto a photocurable resin layer formed on an electrode part before rearrangement. By scanning the resin on the periphery of a metal wiring formation area extending from the electrode part before rearrangement to a bump electrode contact area, is cured. As a result, a cured resin part is formed which works as a guide layer and a protection film for protecting the metal wire in which the metal wiring formation area has a hollow shape. Thereafter, the metal wire is formed inside the cured resin part.
Claims25
A method of manufacturing a semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wire and a bump electrode working as an external terminal, the method comprising steps of:
- (a) forming the top-layer wire that extends on a semiconductor substrate and an insulation film that is formed on the top-layer wire and that exposes the electrode part before rearrangement being a part of the top-layer wire;
- (b) forming a photocurable resin layer on both the insulation film and the electrode part before rearrangement;
- (c) irradiating a laser beam onto a peripheral portion of an area scheduled for forming the metal wire, which extends from the electrode part before rearrangement to a contact area of the bump electrode, and curing the photocurable resin layer by scanning;
- (d) forming a guide layer made of the cured resin part, in which the metal wiring formation scheduled area has a hollow shape, by removing an uncured portion of the photocurable resin layer;
- (e) forming the metal wire that extends from the electrode part before rearrangement to the bump electrode contact area, by performing plating in a hollow-shaped part along the guide layer;
- and
- (f) forming the bump electrode on the bump electrode contact area of the metal wire.
A method of manufacturing a semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wire and a bump electrode working as an external terminal, the method comprising steps of:
- (a) forming the top-layer wire that extends on a semiconductor substrate, and an insulation film that is formed on the top-layer wire and that exposes the electrode part before rearrangement being a part of the top-layer wire;
- (b) forming a photocurable resin layer on both the insulation film and the electrode part before rearrangement;
- (c) in a peripheral portion of an area scheduled for forming the metal wire, which extends from the electrode part before rearrangement to a contact are of the bump electrode, irradiating a laser beam onto an area other than the area that includes the bump electrode contact area and curing the photocurable resin layer;
- (d) forming a guide layer, in which the metal wiring formation scheduled area has a hollow shape and has an aperture larger than the bump electrode contact area, by removing an uncured portion of the photocurable resin layer;
- (e) forming the metal wire that extends from the electrode part before rearrangement to the aperture by performing plating in a hollow-shaped part along the guide layer;
- (f) forming an insulator film on the aperture of the metal wire;
- and
- (g) exposing the metal wire and forming the bump electrode on an exposed part of the metal wire, by removing the insulation film on the bump electrode contact area of the metal wire by etching.
A method of manufacturing a semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wire and a bump electrode working as an external terminal, the method comprising steps of:
- (a) forming the top-layer wire that extends on a semiconductor substrate, and an insulation film that is formed on the top-layer wire and that exposes the electrode part before rearrangement being a part of the top-layer wire;
- (b) forming a photocurable resin layer on both the insulation film and the electrode part before rearrangement;
- (c) irradiating a laser beam onto an area that excludes a part of a lower area in a peripheral part of an area scheduled for forming the metal wire, which extends from the electrode part before rearrangement to a contact area of the bump electrode, and curing the photocurable resin layer by scanning;
- (d) forming a guide layer made of the cured resin layer, which the metal wiring formation scheduled area has a hollow shape, and having an induction hole in a part of the lower area, by removing an uncured portion of the photocurable resin layer;
- (e) forming the metal wire that extends from the electrode part before rearrangement to the bump electrode contact area, by performing plating in a hollow-shaped part along the guide layer;
- and
- (f) forming the bump electrode on the bump electrode contact area of the metal wire.
A method of manufacturing a semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wire and a bump electrode working as an external terminal, the method comprising steps of:
- (a) forming the top-layer wire that extends on a semiconductor substrate, and an insulation film that is formed on the top-layer wire and that exposes the electrode part before rearrangement being a part of the top-layer wire;
- (b) forming a photocurable resin layer on both the insulation film and the electrode part before rearrangement;
- (c) irradiating a laser beam onto a peripheral portion of an area scheduled for forming the metal wire, which extends from the electrode part before rearrangement to a contact area of the bump electrode, and curing the photocurable resin layer by scanning;
- (d) forming a cured resin part that extends from the electrode part before rearrangement to the bump electrode contact area, by removing an uncured portion of the photocurable resin layer;
- (e) forming the metal wire that extends from the electrode part before rearrangement to the bump electrode contact area, by performing plating in a surface of the cured resin part;
- and
- (f) forming the bump electrode on the bump electrode contact area of the metal wire.
A method of manufacturing a semiconductor integrated circuit device, comprising steps of:
- (a) forming a photocurable resin layer on a packaging substrate mounted with a chip having a semiconductor integrated circuit;
- (b) irradiating a laser beam onto an area scheduled for forming a signal path for inputting/outputting a signal to/from the chips, and curing the photocurable resin layer, by scanning;
- and
- (c) forming the signal path by removing an uncured portion of the photocurable resin layer.
A method of manufacturing a semiconductor integrated circuit device, comprising steps of:
- (a) forming a photocurable resin layer on a packaging substrate mounted with a chip having a semiconductor integrated circuit;
- (b) irradiating a laser beam onto the photocurable resin layer, and curing the photocurable resin layer in a cylindrical shape, by scanning;
- and
- (c) forming a pipe by removing an uncured portion of the photocurable resin layer.
A semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wiring and a bump electrode working as an external terminal, the semiconductor integrated circuit device comprising:
- (a) a top-layer wire that extends on a semiconductor substrate;
- (b) an insulation film that is formed on the top-layer wire and that exposes the electrode part before rearrangement as a part of the top-layer wire;
- (c) a metal wire that extends from the electrode part before rearrangement to the bump electrode contact area;
- (d) a protection layer that is formed around the metal wire by curing a photocurable resin;
- and
- (e) a bump electrode formed on the bump electrode contact area of the metal wire.
A semiconductor integrated circuit device having a metal wire between an electrode part before rearrangement being a part of a top-layer wire and a bump electrode working as an external terminal, the semiconductor integrated circuit device comprising:
- (a) a top-layer wire extending on a semiconductor substrate;
- (b) an insulation film being formed on the top-layer wire and exposing the electrode part before rearrangement as a part of the top-layer wire;
- (c) a cured resin part that extends from the electrode part before rearrangement to the bump electrode contact area, and that is formed by curing a photocurable resin;
- (d) a metal wiring part formed around the cured resin part;
- and
- (e) a bump electrode formed on the bump electrode contact area of the metal wiring part.
A semiconductor integrated circuit device, the device comprising:
- (a) a packaging substrate mounted with a chip having a semiconductor integrated circuit;
- and
- (b) a signal path that inputs/outputs a signal to/from the chip, and that is made of a cured resin part formed by curing a photocurable resin.
A semiconductor integrated circuit device, the device comprising:
- (a) a packaging substrate mounted with a chip having a semiconductor integrated circuit;
- and
- (b) a passage pipe formed near the chip and formed in a cylindrical shape by curing a photocurable resin.
Dependencies are inferred from the claim text.