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US 2001/0024871 A1Published application
Semiconductor device and method and apparatus for manufacturing semiconductor device
AssigneeFuji Xerox Co., Ltd.
InventorShigeru Yagi
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AssigneeFuji Xerox Co., Ltd.
InventorShigeru Yagi
Estimating the term…
Provided is a method and apparatus for the production of a semiconductor device, the method and the apparatus producing a high quality and highly functional semiconductor device efficiently at low temperatures in a short time and also a high quality and highly functional semiconductor device produced by the method and apparatus. The semiconductor device is produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature. The method for producing a semiconductor device comprises introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in an activated environment, while continuously activating a nitrogen compound, to form a film of a nitride compound containing nitrogen and the group IIIA elements on a substrate.
A semiconductor device produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, wherein the nitride compound includes one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom and produces photoluminescence at the band edges at room temperature.
A semiconductor device produced by forming a film of a nitride compound on a substrate having heat resistance at 600° C. or less, the nitride compound including one or more elements selected from group IIIA elements of the periodic table and a nitrogen atom, wherein the absorption wavelength for the nitride compound in an infrared absorption spectrum ranges between 3000 cm−1 and 700 cm−1.
A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound while introducing an organic metal compound containing one or more elements selected from IIIA elements of the periodic table intermittently in the activated environment, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate.
A method for producing a semiconductor device, the method comprising continuously activating a nitrogen compound, continuously and separately activating an assistant material which is different from said nitrogen compound simultaneously and introducing an organic metal compound containing one or more elements selected from group IIIA elements of the periodic table intermittently in the environment in which the assistant material is activated, to form a film of a nitride compound containing nitrogen and said group IIIA elements on a substrate.
An apparatus for producing a semiconductor device comprising:
Dependencies are inferred from the claim text.