Method of manufacturing a transistor

A method according to any preceding claim wherein the semiconductor layer is etched after crystallisation to form the semiconductor channel whereby etching removes the regions of the semiconductor layer exposed through vias in the barrier layer to the CEM of the foil.

A method according to any preceding claim wherein the foil consists substantially entirely of the CEM.

A method according to any preceding claim further comprising the step of removing the TFT structure including the foil from the substrate.

A method according to any preceding claim wherein the semiconductor layer is heated to a temperature not exceeding 600° C.

A method as hereinbefore described with reference to the drawings.

A TFT manufactured by a method according to any preceding claim.

A TFT comprising source and drain electrodes joined by a semiconductor channel, a gate insulating layer and a gate electrode, all mounted on a foil comprising a crystallisation enhancing material (CEM).

An active matrix device comprising a row and column array of active elements wherein each element comprises a switching TFT connected to corresponding row and column conductors, all mounted on a foil comprising a crystallisation enhancing material (CEM).

A method of manufacturing an active matrix device comprising a row and column array of active elements wherein each element is associated with a switching TFT comprising source and drain electrodes joined by a semiconductor channel, a gate insulating layer and a gate electrode, and connected to corresponding row and column conductors, the method comprising the steps of:

• exposing a semiconductor layer to a crystallisation enhancing material so as to crystallise the semiconductor layer from regions exposed to the CEM, and forming the semiconductor channel therefrom;
• and
• providing plastic supporting substrates either side of the active element array.