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US 2001/0024852 A1Published application
Process for manufacturing a semiconductor device
AssigneeNEC Corporation
InventorsHidemitsu Aoki, Kaori Watanabe
Life of this patent
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AssigneeNEC Corporation
InventorsHidemitsu Aoki, Kaori Watanabe
Estimating the term…
A ruthenium containing metal 6′ adhering to a periphery of a device forming area, an end face and a rear face in a silicon substrate 10 is removed using a first remover containing (a) at least one compound selected from the group consisting of salts containing chlorate, perchlorate, iodate, periodate, salts containing bromine oxide ion, salts containing manganese oxide ion and salts containing tetravalent cerium ion and (b) at least one acid selected from the group consisting of nitric acid, acetic acid, iodic acid and chloric acid. After the removing treatment, the substrate is washed with hydrofluoric acid to remove the residual remover.
A process for manufacturing a semiconductor device, comprising the steps of:
A process for manufacturing a semiconductor device, comprising the steps of:
A process for manufacturing a semiconductor device, comprising the steps of:
A process for manufacturing a semiconductor device comprising the step of sequentially forming a lower electrode film, a capacitance insulating film and an upper electrode film in a device forming area on a semiconductor substrate,
A process for manufacturing a semiconductor device comprising the steps of:
Dependencies are inferred from the claim text.