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US 2001/0024460 A1Published application
Semiconductor light-emitting device
AssigneeKabushiki Kaisha Toshiba
InventorsMasahiro Yamamoto, Hidetoshi Fujimoto, Shin-ya Nunoue
Life of this patent
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Abstract
A light-emitting diode has a GaN-based multi-layer structure arranged on a sapphire substrate. A pair of electrode pads are arranged on a light-output face of the multi-layer structure. The first and second electrode pads have a total projected area set at 25% or less of that of the light-output face. The electrode pads are connected to electrode pads on a mount frame by solder wiring layers arranged on an insulating film covering the side wall of the multi-layer structure.
Claims21
A semiconductor light-emitting device having a light-output face facing in a first direction, comprising:
- a multi-layer structure defining said light-output face and having a plurality of semiconductor layers stacked in said first direction to form a pn junction for emitting light, said semiconductor layers including a first and second semiconductor layers of first and second conductivity types, respectively, interposing said pn junction;
- a first main electrode arranged on said first semiconductor layer, and having a first electrode pad which covers said light-output face and does not transmit an emitted light;
- a second main electrode arranged on said second semiconductor layer, and having a second electrode pad which covers said light-output face and does not transmit an emitted light, said first and second electrode pads having a total projected area set at 25% or less of that of said light-output face;
- first and second insulating layers arranged on side walls of said multi-layer structure;
- and
- first and second wiring layers arranged on said first and second insulating layers, respectively, and connected to said first and second electrode pads, respectively.
3 more elements
A semiconductor laser device comprising:
- a support substrate consisting essentially of sapphire;
- a multi-layer structure having a plurality of gallium nitride-based compound semiconductor layers stacked on said support substrate to form a laser cavity, said semiconductor layers including an active layer and n-type and p-type semiconductor layers interposing said active layer, said n-type semiconductor layer being closer to said support substrate;
- a lead-out groove formed in said multi-layer structure to extend in parallel to said laser cavity and have a depth from said p-type semiconductor layer to said n-type semiconductor layer;
- a first main electrode arranged in contact with said n-type semiconductor layer at the bottom of said groove;
- and
- a second main electrode arranged in contact with said p-type semiconductor layer,
- wherein said first and second main electrode have first and second electrode pads, respectively, which are arranged on substantially the same plane to interpose said lead-out groove.
4 more elements
A semiconductor laser device comprising:
- an insulating support substrate;
- a multi-layer structure having a plurality of Group III nitride semiconductor layers stacked on said support substrate to form a laser cavity, said semiconductor layers including an active layer and first and second semiconductor layers of first and second conductivity types, respectively, interposing said active layer;
- first and second main electrodes arranged on said first and second semiconductor layers, respectively, and having first and second electrode pads, respectively;
- an insulating layer arranged on a side wall of said multi-layer structure;
- a mount frame supporting said multi-layer structure through said support substrate and having a pair of mount electrode pads used as n-side and p-side electrodes, respectively;
- a first wiring layer arranged on or above said insulating layer and electrically connecting said first electrode pad and one of said pair of mount electrode pads, said first wiring layer having a thickness larger than that of said first electrode pad to function as a heat-discharging member for discharging heat generated in said multi-layer structure;
- and
- a second wiring layer electrically connecting said second electrode pad and the other of said pair of mount electrode pads.
5 more elements
Dependencies are inferred from the claim text.