Magnetoresistive element and use thereof as a memory element in a memory cell configuration

Abstract

In a magnetoresistive element, a non-magnetic layer element is disposed between a first ferromagnetic layer element and a second ferromagnetic layer element. The non-magnetic layer element consists of a material that exhibits a diffusion barrier effect in a temperature range that is required in the production of the magnetoresistive element, and that does not itself diffuse into the adjacent ferromagnetic layer elements. The magnetoresistive element is suitable both as a sensor element and as a memory element of a memory cell configuration.

Dependencies are inferred from the claim text.