Tunnel magnetoresistive element, thin-film magnetic head and memory element, and methods of manufacturing same
OwnerKoji Shimazawa, Satoru Arakiinventors
Life of this patent
Estimating the term…
Abstract
A TMR element includes: a free layer formed on a lower gap layer; a tunnel barrier layer formed on the free layer; and a pinned layer formed on the tunnel barrier layer. The pinned layer and the tunnel barrier layer have sidewalls formed through etching. The TMR element further comprises a deposition layer made of a material that is separated by etching and deposits on the sidewalls and undergoes oxidation.
Claims9
A tunnel magnetoresistive element comprising a tunnel barrier layer and two magnetic layers sandwiching the tunnel barrier layer, wherein:
- the tunnel barrier layer and at least one of the magnetic layers include sidewalls formed through etching;
- and
- the tunnel magnetoresistive element further comprises a deposition layer made of a material that is separated through the etching and deposits on the sidewalls and undergoes oxidation or nitriding.
A thin-film magnetic head incorporating a tunnel magnetoresistive element comprising a tunnel barrier layer and two magnetic layers sandwiching the tunnel barrier layer, wherein:
- the tunnel barrier layer and at least one of the magnetic layers include sidewalls formed through etching;
- and
- the tunnel magnetoresistive element further comprises a deposition layer made of a material that is separated through the etching and deposits on the sidewalls and undergoes oxidation or nitriding.
A memory element incorporating a tunnel magnetoresistive element comprising a tunnel barrier layer and two magnetic layers sandwiching the tunnel barrier layer, wherein:
- the tunnel barrier layer and at least one of the magnetic layers include sidewalls formed through etching;
- and
- the tunnel magnetoresistive element further comprises a deposition layer made of a material that is separated through the etching and deposits on the sidewalls and undergoes oxidation or nitriding.
A method of manufacturing a tunnel magnetoresistive element comprising a tunnel barrier layer and first and second magnetic layers sandwiching the tunnel barrier layer, the method including the steps of:
- forming the first magnetic layer;
- forming the tunnel barrier layer on the first magnetic layer;
- forming the second magnetic layer on the tunnel barrier layer;
- forming sidewalls of at least the second magnetic layer and the tunnel barrier layer by selectively etching these layers;
- and
- performing processing for increasing a resistance value of a deposition layer made of a material that is separated through the etching and deposits on the sidewalls.
A method of manufacturing a thin-film magnetic head incorporating a tunnel magnetoresistive element comprising a tunnel barrier layer and first and second magnetic layers sandwiching the tunnel barrier layer, the method including the steps of:
- forming the first magnetic layer;
- forming the tunnel barrier layer on the first magnetic layer;
- forming the second magnetic layer on the tunnel barrier layer;
- forming sidewalls of at least the second magnetic layer and the tunnel barrier layer by selectively etching these layers;
- and
- performing processing for increasing a resistance value of a deposition layer made of a material that is separated through the etching and deposits on the sidewalls.
A method of manufacturing a memory element incorporating a tunnel magnetoresistive element comprising a tunnel barrier layer and first and second magnetic layers sandwiching the tunnel barrier layer, the method including the steps of forming the first magnetic layer;
- forming the tunnel barrier layer on the first magnetic layer;
- forming the second magnetic layer on the tunnel barrier layer;
- forming sidewalls of at least the second magnetic layer and the tunnel barrier layer by selectively etching these layers;
- and
- performing processing for increasing a resistance value of a deposition layer made of a material that is separated through the etching and deposits on the sidewalls.
Dependencies are inferred from the claim text.