Flip- chip semiconductor device and method of forming the same

A semiconductor device comprising:

• a semiconductor substrate;
• at least a pad electrode provided over said semiconductor substrate;
• a passivation film provided over said semiconductor substrate;
• an insulative resin stress buffer layer provided over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode;
• at least a land portion provided over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• an adhesive layer provided over said land portion and said insulative resin stress buffer layer;
• an insulating sheet provided over said adhesive layer at least a through hole penetrating said insulating sheet and said adhesive layer, and said at least through hole being positioned over said at least land portion;
• and
• at least a post electrode in said at least through hole, said at least post electrode having a bottom portion in contact with said top surface of said at least land portion and a top portion in contact with said at least bump, so that said at least land portion is electrically connected through said at least post electrode to said bump,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer.

A semiconductor device comprising:

• a semiconductor substrate;
• at least a pad electrode provided over said semiconductor substrate;
• a passivation film provided over said semiconductor substrate;
• an insulative resin stress buffer layer provided over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode;
• at least a land portion provided over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• an inter-level insulative resin layer provided over said land portion and said insulative resin stress buffer layer;
• at least a first through hole penetrating said inter-level insulative resin layer, and said at least first through hole being positioned over said at least land portion;
• at least a post contact in said at least first through hole, said at least post contact having a bottom portion in contact with said top surface of said at least land portion and a top portion which is equal to or slightly higher in level than a top surface of said inter-level insulative resin layer;
• an adhesive layer provided over said inter-level insulative resin layer;
• an insulating sheet provided over said adhesive layer;
• at least a second through hole penetrating said insulating sheet and said adhesive layer, and said at least second through hole being positioned over said at least post contact;
• and
• at least a post electrode in said at least through hole, said at least post electrode having a bottom portion in contact with a top of said at least post contact and a top portion in contact with said at least bump, so that said at least land portion is electrically connected through said at least post electrode and said at least post contact to said bump,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer.

A semiconductor device comprising:

• a semiconductor substrate;
• at least a pad electrode provided over said semiconductor substrate;
• a passivation film provided over said semiconductor substrate;
• an insulative resin stress buffer layer provided over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode;
• at least a land portion provided over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• an adhesive layer provided over said land portion and said insulative resin stress buffer layer;
• and
• an insulating sheet provided over said adhesive layer,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer, and wherein said at least bump is partially buried in said adhesive layer and said insulating sheet, and a bottom of said at least bump is in contact directly with said top surface of said land portion, and said bump is tightly supported by said adhesive layer and secured to said land portion.

A method of forming a semiconductor device comprising the steps of:

• forming a passivation film and at least a pad electrode over a semiconductor substrate;
• forming an insulative resin stress buffer layer over said at least pad electrode and said passivation film;
• forming at least an opening in said insulative resin stress buffer layer, said at least opening being positioned over at least a part of said at least pad electrode;
• and
• forming at least a land portion over said insulative resin stress buffer layer, wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer.

A method of forming a semiconductor device comprising the steps of:

• forming a passivation film and at least a pad electrode over a semiconductor substrate forming an insulative resin stress buffer layer over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode;
• forming at least a land portion over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• forming an adhesive layer over said land portion and said insulative resin stress buffer layer;
• forming an insulating sheet over said adhesive layer;
• forming at least a through hole penetrating said insulating sheet and said adhesive layer, and said at least through hole being positioned over said at least land portion;
• and
• forming at least a post electrode in said at least through hole, said at least post electrode having a bottom portion in contact with said top surface of said at least land portion and a top portion in contact with said at least bump, so that said at least land portion is electrically connected through said at least post electrode to said bump,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer.

A method of forming a semiconductor device comprising the steps of:

• forming a passivation film and at least a pad electrode over a semiconductor substrate;
• forming an insulative resin stress buffer layer over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode;
• forming at least a land portion over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• forming an inter-level insulative resin layer over said land portion and said insulative resin stress buffer layer;
• forming at least a first through hole penetrating said inter-level insulative resin layer, and said at least first through hole being positioned over said at least land portion;
• forming at least a post contact in said at least first through hole, said at least post contact having a bottom portion in contact with said top surface of said at least land portion and a top portion which is equal to or slightly higher in level than a top surface of said inter-level insulative resin layer;
• forming an adhesive layer over said inter-level insulative resin layer;
• forming an insulating sheet over said adhesive layer;
• forming at least a second through hole penetrating said insulating sheet and said adhesive layer, and said at least second through hole being positioned over said at least post contact;
• and
• forming at least a post electrode in said at least through hole, said at least post electrode having a bottom portion in contact with a top of said at least post contact and a top portion in contact with said at least bump, so that said at least land portion is electrically connected through said at least post electrode and said at least post contact to said bump,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer.

A method of forming a semiconductor device comprising the steps of:

• forming a passivation film and at least a pad electrode over a semiconductor substrate
• forming an insulative resin stress buffer layer over said at least pad electrode and said passivation film, said insulative resin stress buffer layer having at least an opening positioned over at least a part of said at least pad electrode
• forming at least a land portion over said insulative resin stress buffer layer and also electrically connected to said at least pad electrode, and a top surface of said at least land portion being electrically connected to at least a bump which is positioned over said at least land portion;
• forming an adhesive layer over said land portion and said insulative resin stress buffer layer;
• and
• forming an insulating sheet over said adhesive layer,
• wherein said at least land portion and said passivation film are isolated from each other by said insulative resin stress buffer layer, and
• wherein said at least bump is partially buried in said adhesive layer and said insulating sheet, and a bottom of said at least bump is in contact directly with said top surface of said land portion, and said bump is tightly supported by said adhesive layer and secured to said land portion.