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US 2001/0023988 A1Published application
Semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsMasaaki Hatano, Takamasa Usui
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Abstract
There is provided a semiconductor device comprising a Cu film provided above a main surface of a semiconductor substrate and used as a wiring, an intermediate layer formed at least on the Cu film, and an Al film formed on the intermediate layer and used as a pad, wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.
Claims12
A semiconductor device comprising:
- a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
- an intermediate layer formed at least on the Cu film;
- and
- an Al film formed on the intermediate layer and used as a pad;
- wherein the intermediate layer comprises a refractory metal nitride film and a refractory metal film formed on the refractory metal nitride film.
2 more elements
A semiconductor device comprising:
- a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
- an intermediate layer formed at least on the Cu film;
- and
- an Al film formed on the intermediate layer and used as a pad;
- wherein the intermediate layer comprises a refractory metal film and a refractory metal nitride film formed on the refractory metal film.
2 more elements
A semiconductor device comprising:
- a Cu film provided above a main surface of a semiconductor substrate and used as a wiring;
- an intermediate layer formed at least on the Cu film;
- and
- an Al film formed on the intermediate layer and used as a pad;
- wherein the intermediate layer comprises a first refractory metal film, a refractory metal nitride film formed on the first refractory metal film, and a second refractory metal film formed on the refractory metal nitride film.
2 more elements
Dependencies are inferred from the claim text.