US 2001/0023967 A1 · Power semiconductor device having a protection circuit

Abstract

A power semiconductor device of the present invention comprises a voltage drive type power MOS transistor, a series connection of a first resistor and Zener diode, a second resistor, and a series connection of a third resistor and MOS transistor. The power MOS transistor has a gate, source and drain. A drain-to-source voltage of the power MOS transistor is applied across the series connection of the first resistor and Zener diode. A gate-to-source voltage of the power MOS transistor is applied across the second resistor. The gate-to-source voltage of the power MOS transistor is applied across a series connection of a third resistor and the MOS transistor. The MOS transistor has a gate, source and drain. The gate of the MOS transistor is connected to a node between the first resistor and the Zener diode.

Claims10

Dependent claims

A power semiconductor device comprising:

a voltage drive type power MOS transistor having a gate, source and drain;
a series connection of a first resistor and Zener diode across which a drain-to-source voltage of the power MOS transistor is applied;
a second resistor across which a gate-to-source voltage of the power MOS transistor is applied;
and
a series connection of a third resistor and MOS transistor across which the gate-to-source voltage of the power MOS transistor is applied, the MOS transistor having a gate, source and drain, the gate of the MOS transistor being connected between the first resistor and the Zener diode.

2 more elements

Dependencies are inferred from the claim text.

Power semiconductor device having a protection circuit

Life of this patent

Power semiconductor device having a protection circuit

Life of this patent

Abstract

Claims10