Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
AssigneeSharp Kabushiki Kaisha
InventorsYoshihiro Ueta, Takayuki Yuasa
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Abstract
A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, includes the steps of: providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001>orientation; and allowing a nitride semiconductor crystal to grow on the surface of the sapphire substrate.
Claims6
A crystal growth method for growing a nitride semiconductor crystal on a sapphire substrate in a vapor phase, the method comprising the steps of:
- providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001>orientation;
- and
- allowing a nitride semiconductor crystal to grow on the surface of the sapphire substrate.
A method for producing a nitride semiconductor light emitting device, the method comprising the steps of:
- providing a sapphire substrate having a substrate orientation inclined by about 0.05° to about 0.2° from a <0001>orientation;
- and
- providing a layered structure on the sapphire substrate, the layered structure including a quantum well active layer interposed between layers which have conductivity types different from each other.
A nitride semiconductor light emitting device, comprising:
- a first cladding layer of a nitride semiconductor having a first conductivity type;
- a second cladding layer of a nitride semiconductor having a second conductivity type which is different from the first conductivity type;
- and
- a quantum well active layer of a nitride semiconductor interposed between the first and second cladding layers, wherein
- interfaces between the active layer and the first and second cladding layers are inclined by about 0.05° to about 0.2° from a <0001>orientation.
Dependencies are inferred from the claim text.