Method and apparatus for immersion treatment of semiconductor and other devices

A method for treating a workpiece with an aqueous solution, comprising:

• providing a carrier fluid comprising at least one component;
• passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane, so as to draw oxygen from said aqueous solution through said membrane to said carrier fluid;
• providing a treatment chamber;
• at least partly filling said treatment chamber with said aqueous solution from said osmotic membrane degasifier;
• and
• at least partly immersing said workpiece in said aqueous solution.

A method for treating opposed major surfaces of a semiconductor device, comprising:

• providing a treatment chamber defining a cavity for receiving the semiconductor device;
• providing a carrier fluid;
• providing an aqueous solution;
• inserting the semiconductor device into the cavity;
• passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane so as to draw oxygen from said aqueous solution through said membrane to said carrier fluid and so as to introduce carrier fluid through said membrane, into said aqueous solution so as to control the pH of said aqueous solution;
• and
• contacting said semiconductor wafer with aqueous solution from said osmotic membrane degasifier.

Apparatus for processing a semiconductor device, comprising:

• a treatment chamber defining a cavity for receiving the semiconductor device with a device opening through which said semiconductor device is passed into and out of the cavity;
• a plenum coupled to the treatment chamber and defining a mixing chamber including a aqueous solution inlet opening for introducing aqueous solution into the mixing chamber and a nonaqueous solvent opening for introducing a nonaqueous solvent into the mixing chamber;
• and
• an osmotic membrane degasifier defining a degasifier cavity, a membrane dividing the degasifier cavity into first and second parts, an aqueous solution inlet and a aqueous solution outlet associated with said first part, and a carrier fluid inlet and a carrier fluid outlet associated with said second part, with the aqueous solution outlet coupled to the aqueous solution inlet opening of said plenum.

A method for cleaning opposed major surfaces of a semiconductor device, comprising:

• providing a cleaning chamber defining a cavity or receiving the semiconductor device;
• inserting the semiconductor device into the cavity;
• filling the cavity with a first solvent so as to immerse said semiconductor device in said first solvent while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said first solvent to said semiconductor device;
• emptying said cavity of said first solvent;
• filling the cavity with a second solvent so as to immerse said semiconductor device in said second solvent while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said second solvent to said semiconductor device;
• emptying said cavity of said second solvent;
• providing an aqueous solution;
• providing a carrier fluid containing carbon dioxide
• passing said aqueous solution and said carrier fluid through an osmotic membrane degasifier having a membrane, so as to draw oxygen from said aqueous solution through said membrane to said carrier fluid and so as to introduce carbon dioxide gas through said membrane, into said aqueous solution so as to control the pH of said aqueous solution.
• filling the cavity with a aqueous solution from said osmotic membrane degasifier so as to immerse said semiconductor device in said aqueous solution while exciting said chamber with ultrasonic energy so as to transmit said ultrasonic energy through said aqueous solution to said semiconductor device;
• emptying said cavity of said aqueous solution:
• drying the major surfaces of conductor device;
• and
• removing said semiconductor device from said cavity.