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AssigneeHitachi, Ltd.
InventorsHideyuki Kazumi, Ichiro Sasaki, Kenji Maeda, Tsutomu Tetsuka, Hironobu Kawahara
Estimating the term…
A plasma processing apparatus has a vacuum vessel, a processing chamber arranged in the vacuum vessel and supplied with gas, a support electrode arranged in the processing chamber to support an object to be processed, a radio frequency providing unit for supplying a radio frequency in UHF or VHF band, and a magnetic field generating unit for generating a magnetic field in the processing chamber, wherein the radio frequency providing unit includes an antenna having a groove or step formed in its surface opposing the process object, whereby plasma of high density and high uniformity can be generated in a wide parameter region.
A plasma processing apparatus comprising a vacuum vessel, a processing chamber arranged in said vacuum vessel and supplied with gas, a support electrode arranged in said processing chamber to support an object to be processed, radio frequency providing means for supplying a radio frequency in UHF or VHF band to said processing chamber, and magnetic field generating means for generating a magnetic field in said processing chamber,
Dependencies are inferred from the claim text.