US 2001/0022387 A1 · Pattern forming method for semiconductor manufacturing

Abstract

A process for pattern forming during semiconductor manufacturing comprises the steps of forming a resist pattern on a substrate, then a metallic layer, of aluminum for example, is applied to the complete surface of the substrate and the resist pattern, by spattering or the like. Next a heating step is carried out. The heating step is accomplished by immersing the resist pattern in a solvent heated in the vicinity of a boiling point thereof, for effecting expansion of the resist pattern. Then the resist pattern is removed along with undesired remnants of the metallic layer which are adhered to the resist pattern.

Claims57

Dependent claims

A method of forming patterns during semiconductor manufacture, comprising the steps of:

forming a resist pattern of a heat expandable material on a substrate;
covering the surface of said substrate, including said resist pattern with a layer of a desired material;
immersing said resist pattern in a solvent heated in the vicinity of a boiling point thereof;
and
removing said resist pattern and undesired remnants of said layer of a desired material.

2 more elements

A method of forming thin film transistors comprising the steps of:

applying a layer of a first semiconductive material over a substrate;
applying a resist layer in a predetermined pattern over said first semiconductive material;
removing portions of said first semiconductive material exposed through said pattern formed in said resist layer;
applying a layer of a first conductive material over said resist layer and a channel formed by said removal of said portions of said first semiconductive layer;
immersing said resist layer in a solvent heated in the vicinity of a boiling point thereof;
removing said resist layer and undesired portions of said first conductive material;
applying a layer of insulating material over a surface of said first semiconductive material and said first conductive material;
applying a layer of positive photo-resist over said insulating material;
irradiating said substrate from a side opposite that to which the layer of said first semiconductive material has been applied;
applying a layer of a second semiconductive material over said insulating material and portions of said positive photo-resist remaining after said irradiation;
immersing said positive photo resist layer in a solvent heated in the vicinity of a boiling point thereof;
removing said positive photo resist and undesired portions of said second semiconductive material;
applying a second resist layer over said second semiconductive material so as to mask said second semiconductive material from a channel formed in said second semiconductive material by removal of said positive photo resist;
applying a layer of a semiconductive material other than said second semiconductive material over said second resist layer and portions of said insulating layer exposed by removal or said positive photo resist;
immersing said second resist layer in a solvent heated in the vicinity of a boiling point thereof;
and
removing said second resist layer and undesired portions of said semiconductive material other than said second semiconductive material.

14 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/858,756Filed 16 May 2001

Priority

JP P100805/912 May 1991

Published

20 Sep 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10P 76/202
Of masks comprising organic materials: for lift-off processes
H10P 50/73
Etching of wafers, substrates or parts of devices: using masks for insulating materials

Pattern forming method for semiconductor manufacturing

Life of this patent

Pattern forming method for semiconductor manufacturing

Life of this patent

Abstract

Claims57