Column transistor for semiconductor devices

A semiconductor device comprising:

• an orthogonal matrix of gate electrodes,
• each gate electrode comprising four bent portions,
• each of the four bent portions being formed on one of four separate active regions and defining four separate column transistors, the four column transistors comprising a set of transistors, wherein
• a number of the gate electrodes are electrically connected to one another;
• a plurality of parallel bit lines, four bit lines running over each set of transistors, only two of the four bit lines being in contact with any single active region;
• a plurality of parallel local data lines, the local data lines running in a direction substantially perpendicular to the bit lines, four local data lines running over each set of transistors, only two local data lines running over any single active region, and only one local data line being in contact with any single active region.

A column transistor in a semiconductor device comprising:

• an orthogonal matrix of a plurality of sets of four square active regions;
• gate electrodes having a ∩ or ∪ formed bent portion overlapped with the active region, adjacent four of which constitute one set in a form connected with one another and are connected to one sense amplifier;
• bit lines running in one direction such that adjacent to a first bit line, a first bitlinebar, a second bitlinebar, and a second bit line are sequentially overlapped with one of the active regions, and two of which are in contact with the one active region;
• and
• local data lines running in a direction perpendicular to the bit lines such that two of the local data lines are running over one active region, only one of which is in contact with the active region, with one set of four local data lines arranged in an order of adjacent first local data line, second local databarline, first local databarline, and second data line starting from a right side of one set of four active regions.