Plasma processing equipment and plasma processing method using the same

A plasma processing equipment having a vacuum processing chamber, plasma generation means, a stage for loading a wafer to be processed in said vacuum processing chamber, an opposing electrode having an area almost equal to or wider than said wafer which is installed opposite to said stage, a ground, and a bias power source for applying a high frequency bias to said wafer, wherein impedance adjustment means for making impedance up to said ground viewed from said high frequency bias almost uniform in said wafer surface is included.

A plasma processing equipment having a vacuum processing chamber, plasma generation means, a stage for loading a wafer to be processed in said vacuum processing chamber, an opposing electrode having an area almost equal to or wider than said wafer which is installed opposite to said stage, and a bias power source for applying a high frequency bias to said wafer and serving as a role of an antenna for radiating electromagnetic waves so as to generate and maintain plasma by said opposing electrode, wherein current path correction means for correcting a current path part in the neighborhood of the outer periphery of said wafer among a high frequency current path by said high frequency bias so as to look toward the wafer opposing surface of said opposing electrode is installed.

A plasma processing equipment having a vacuum processing chamber, plasma generation means, a stage for loading a wafer to be processed in said vacuum processing chamber, an opposing electrode having an area almost equal to or wider than said wafer which is installed opposite to said stage, and a bias power source for applying a high frequency bias to said wafer and serving as a role of an antenna for radiating electromagnetic waves so as to generate and maintain plasma by said opposing electrode, wherein impedance adjustment means for making impedance up to said ground viewed from said high frequency bias almost uniform in said wafer surface is included.

A plasma processing equipment having a vacuum processing chamber, evacuation means, plasma generation means, plasma generation gas supply means, a stage for loading a wafer to be processed in said vacuum processing chamber, and an opposing electrode having an area almost equal to or wider than said wafer at a location opposite to said stage, wherein impedance for a high frequency bias of said opposing electrode is larger on the outer side in the radial direction of said wafer than on the inner side.

A plasma processing equipment having a vacuum processing chamber, plasma generation means, a stage for loading a wafer to be processed in said vacuum processing chamber, an opposing electrode having an area almost equal to or wider than said wafer which is installed opposite to said stage, and a bias power source for applying a high frequency bias to said wafer, wherein means for controlling a difference of self bias potential on said wafer which is generated when said high frequency bias power source is turned on to 5 V or less is included.

A plasma processing method by a plasma processing equipment having a vacuum processing chamber, plasma generation means, a stage for loading a wafer to be processed in said vacuum processing chamber, an opposing electrode having an area almost equal to or wider than said wafer which is installed opposite to said stage, and a bias power source for applying a high frequency bias to said wafer and including current path correction means for correcting the current path part in the neighborhood of the outer periphery of said wafer among the high frequency current path by said high frequency bias so as to look toward said wafer opposing surface of said opposing electrode comprises a step of introducing processing gas into said vacuum processing chamber, a step of turning power on, igniting plasma, applying a high frequency bias to said wafer, and generating uniform self bias potential on said wafer when said high frequency bias is applied by said current path correction means, and a step of processing said wafer by said plasma.