Method and apparatus for single crystal gallium nitride (GAN) bulk synthesis
AssigneeGAN Semiconductor Inc.
InventorsHak Dong Cho, Sang Kyu Kang
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Abstract
A method and apparatus for homoepitaxial growth of freestanding, single bulk crystal Gallium Nitride (GaN) are provided, wherein a step of nucleating GaN in a reactor results in a GaN nucleation layer having a thickness of a few monolayers. The nucleation layer is stabilized, and a single bulk crystal GaN is grown from gas phase reactants on the GaN nucleation layer. The reactor is formed from ultra low oxygen stainless steel.
Claims44
A method for growing a single freestanding Gallium Nitride (GaN) crystal, comprising:
- generating a GaN substrate structure by growing a GaN nucleation layer on a susceptor, wherein a thickness of the nucleation layer is at least one monolayer;
- stabilizing the GaN substrate structure;
- and
- growing a GaN layer on at least one surface of the GaN substrate structure using a plurality of gas phase reactants.
A nitride semiconductor device comprising:
- a GaN substrate structure formed by growing a GaN nucleation layer on a susceptor, wherein a thickness of the nucleation layer is at least one monolayer, wherein the GaN substrate structure is stabilized;
- and
- a GaN layer, wherein the GaN layer is grown on at least one surface of the GaN substrate structure using a plurality of gas phase reactants.
A light emitting device comprising a nitride semiconductor device, the nitride semiconductor device comprising:
- a GaN substrate structure formed by growing a GaN nucleation layer on a susceptor, wherein a thickness of the nucleation layer is at least one monolayer, wherein the GaN substrate structure is stabilized;
- and
- a GaN layer, wherein the GaN layer is grown on at least one surface of the GaN substrate structure using a plurality of gas phase reactants.
A composition of matter for a nitride semiconductor device comprising:
- a GaN substrate structure including a GaN nucleation layer on a susceptor, the GaN substrate structure being stabilized, and wherein a thickness of the nucleation layer is at least one monolayer;
- and
- a GaN layer adjacent the substrate structure, wherein the GaN layer is grown on at least one surface of the GaN substrate structure.
Dependencies are inferred from the claim text.