Semiconductor processing apparatuses, and methods of forming antireflective coating materials over substrates

A semiconductor processing apparatus comprising:

• at least one support member comprising an upper surface for supporting a semiconductor wafer;
• a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component;
• and
• a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance.

A semiconductor processing method comprising:

• providing at least one support member having an upper surface for supporting a semiconductor wafer;
• providing a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component;
• providing a mechanical stop associated with one of the support member and the component and not associated with another of the support member and the component, the mechanical stop engaging the other of the support member and the component to which it is not associated when the support member upper surface extends above the component to a predetermined distance and preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance;
• moving the at least one of the support member and the component to elevate the support member relative to the component until the mechanical stop engages with the other of the support member and the component to which it is not associated;
• providing a semiconductor wafer on the elevated support member upper surface;
• utilizing the component to treat the semiconductor wafer while the semiconductor wafer is on the elevated support member and elevated above the component to the predetermined distance;
• moving the at least one of the support member and the component to lower the semiconductive wafer relative to the component;
• and
• after the semiconductor wafer is lowered, utilizing the component to treat the semiconductor wafer.

A semiconductor processing method comprising:

• providing at least one support member having an upper surface for supporting a semiconductor wafer;
• providing a component through which the support member extends, the component comprising a front surface and a back surface, at least one of the support member and the component being movable relative to the other of the support member and the component such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the component to lower the wafer relative to the front surface of the component;
• providing a block joined to the support member below the component back surface, the block engaging the component back surface when the support member upper surface extends above the component to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance;
• moving the at least one of the support member and the component to elevate the support member relative to the component until the block is engaged against the component back surface;
• providing a semiconductor wafer on the elevated support member upper surface;
• utilizing the component to treat the semiconductor wafer while the semiconductor wafer is on the elevated support member and elevated above the component to the predetermined distance;
• moving the at least one of the support member and the component to lower the semiconductive wafer relative to the component;
• and
• after the semiconductor wafer is lowered, utilizing the component to treat the semiconductor wafer.

A method of forming an antireflective coating material over a substrate comprising:

• providing at least one support member having an upper surface for supporting a semiconductor wafer;
• providing a heater through which the support member extends, the heater comprising a heated front surface and a back surface, at least one of the support member and the heater being movable relative to the other of the support member and the heater such that the support member can support a wafer in an elevated position above the front surface and can be withdrawn into the heater to lower the wafer relative to the front surface of the component;
• providing a block joined to the support member below the component back surface, the block engaging the heater back surface when the support member upper surface extends above the heater front surface to a predetermined distance, the block preventing the support member upper surface from extending beyond the front surface by more than the predetermined distance;
• moving the at least one of the heater and the support member to elevate the support member relative to the heater until the block is engaged;
• providing a semiconductor wafer on the elevated support member upper surface, the semiconductor wafer comprising a liquid antireflective coating over a surface of the wafer;
• utilizing the heater to heat the semiconductor wafer to a first temperature while the semiconductor wafer is on the elevated support member and above the heater front surface by the predetermined distance;
• moving the one of the support member and the heater to lower the semiconductor wafer relative to the front surface of the heater;
• and
• after lowering the semiconductor wafer, utilizing the heater to heat the semiconductor wafer to a second temperature, the second temperature being greater than the first temperature, the antireflective coating being solidified after the heating to the second temperature.