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US 2001/0019898 A1Published application
Integrated circuit with borderless contacts
AssigneeIntel Corporation
InventorsMohamed Arafa, Scott Thompson
Life of this patent
Estimating the term…
Abstract
An integrated circuit comprising a conductive region formed on a semiconductor substrate, a silicate glass layer formed on the conductive region, and an etch stop layer formed on the silicate glass layer. The integrated circuit also includes a borderless contact that is coupled to the conductive region.
Claims15
An integrated circuit comprising:
- a conductive region formed on a semiconductor substrate;
- a silicate glass layer formed on the conductive region;
- an etch stop layer formed on the silicate glass layer;
- and
- a borderless contact coupled to the conductive region.
2 more elements
A method for forming an integrated circuit comprising:
- forming a conductive region on a semiconductor substrate;
- forming a silicate glass layer on the conductive region;
- forming an etch stop layer on the silicate glass layer;
- and
- forming a borderless contact coupled to the conductive region.
2 more elements
A method for forming an integrated circuit comprising:
- forming a conductive region on a semiconductor substrate;
- forming an undoped silicon dioxide layer on the conductive material;
- forming a silicon nitride layer on the undoped silicon dioxide layer;
- forming a PSG layer on the silicon nitride layer;
- and
- forming a borderless contact coupled to the conductive region.
3 more elements
Dependencies are inferred from the claim text.