Method of forming a semiconductor structure to provide electrostatic discharge protection
OwnerDmitri G. Kravtchenko, Anatoly U. Paderininventors
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Abstract
An improved method is disclosed for protecting active and passive devices against electrostatic discharge (ESD). The method forms a device which is an improved semiconductor diode having anode, injector and ohmic contact regions located within a cathode region. The improved semiconductor diode allows for ESD higher currents without damage to active or passive devices including, for example, resistor-capacitor networks or resistor-capacitor-inductor networks incorporating the improved semiconductor diode.
Claims8
A method for forming a semiconductor diode for protection against electrostatic discharge comprising the steps of:
- forming an N type semiconductor substrate;
- forming a P well cathode within the N type semiconductor substrate;
- forming an N+ type anode region within the P well cathode;
- forming an N+ type injector region within the P well cathode and spaced apart from the N+ type anode region;
- forming a P+ type ohmic contact region within the P well cathode, the N+ type injector region and the P+ type ohmic contact region are adjacent and co-planar to each other;
- forming a first metal electrode electrically connected to the N+ type anode region;
- and
- forming a second metal electrode in electrical contact with both the N+ type injector region and the P+ type ohmic contact region.
A method for forming a semiconductor diode for protection against electrostatic discharge comprising, in combination:
- forming a semiconductor substrate of one type conductivity;
- forming a region of opposite type conductivity located within the semiconductor substrate;
- forming a first region of said one type conductivity and having a higher concentration of impurities than the concentration of impurities in the semiconductor substrate located within the region of opposite type conductivity;
- forming an injector region of said one type conductivity and having a higher concentration of impurities than the concentration of impurities in the semiconductor substrate located within the region of opposite type conductivity and spaced apart from the first region;
- forming an ohmic contact region located within the region of opposite type conductivity, the injector region and the ohmic contact region are adjacent and co-planar to each other;
- forming a first metal electrode electrically connected to the first region;
- and
- forming a second metal electrode in electrical contact with both the injector region and the ohmic contact region.
Dependencies are inferred from the claim text.