Method for producing a semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• crystallizing said amorphous semiconductor film by diffusing a crystallization promoting material selectively disposed on said amorphous semiconductor film;
• and
• reducing a concentration of said crystallization promoting material by a gettering material selectively diffused into a crystallized semiconductor film,
• wherein said crystallization promoting material and said gettering material are diffused from a same portion of said semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• disposing a material in contact with a selected portion of said amorphous semiconductor film, said material containing a crystallization promoting material and a gettering material;
• first heating said amorphous semiconductor film and said material to crystallize said semiconductor film;
• and
• second heating said semiconductor film and said material thereby gettering said crystallization promoting material in a crystallized semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• crystallizing said amorphous semiconductor film by diffusing a crystallization promoting material selectively disposed on said amorphous semiconductor film;
• reducing a concentration of said crystallization promoting material by a gettering material selectively diffused into a crystallized semiconductor film;
• and
• patterning said crystallized semiconductor film into a plurality of active layers,
• wherein said crystallization promoting material and said gettering material are diffused from a same portion of said semiconductor film.

A method of manufacturing a semiconductor device comprising the steps of:

• forming an amorphous semiconductor film over a substrate;
• disposing a material in contact with said amorphous semiconductor film, said material containing a crystallization promoting material and a gettering material;
• first heating said amorphous semiconductor film and said material to crystallize said semiconductor film;
• second heating said semiconductor film and said material thereby gettering said crystallization promoting material in a crystallized semiconductor film;
• and
• patterning said crystallized semiconductor film into a plurality of active layers.