Capacitor for integrated circuit and its fabrication method
AssigneeMatsushita Electronics Corporation
InventorsYasuhiro Uemoto, Eiji Fujii, Koji Arita, Yoshihisa Nagano, Yasuhiro Shimada, Masamichi Azuma, Atsuo Inoue, Yasufumi Izutsu
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Abstract
A method for fabricating a capacitor for an integrated circuit, comprising the steps of forming a titanium film for an adhesion layer over a substrate, forming a titanium dioxide film for a diffusion barrier layer by annealing the titanium film after ion-implantation of oxygen ion into a surface region of the titanium film so as to change titanium in the surface region to titanium dioxide, and forming a high dielectric constant capacitor on the titanium dioxide film.
Claims13
A method for fabricating a capacitor for an integrated circuit comprising the steps of:
- forming an adhesion layer of a metal over a substrate;
- forming a diffusion barrier layer of a compound of said metal and a non-metal on said adhesion layer by annealing said adhesion layer after ion implantation of said non-metal into a surface region of said adhesion layer so as to change said metal in said surface region to said compound;
- forming a bottom electric layer of a noble metal on said diffusion barrier layer;
- forming a dielectric layer of a metal oxide on said bottom electrode layer;
- forming a top electrode layer of a conductive metal on said dielectric layer;
- etching said top electrode layer and dielectric layer selectively;
- etching said bottom electrode layer selectively;
- and
- etching said diffusion barrier layer and adhesion layer selectively.
A method for fabricating a capacitor for an integrated circuit comprising the steps of:
- forming an adhesion layer of a metal and a diffusion barrier layer of a compound of said metal and a non-metal over a substrate by sputtering said metal continuously by using a target of said metal wherein a gas of said non-metal is induced at the time when a thickness of said adhesion layer reaches to a predetermined thickness;
- forming a bottom electrode layer of a noble metal on said diffusion barrier layer;
- forming a dielectric layer of a metal oxide on said bottom electrode layer;
- forming a top electrode layer of a conductive metal on said dielectric layer;
- etching said top electrode layer and dielectric layer selectively;
- etching said bottom electrode layer selectively;
- and
- etching said diffusion barrier layer and adhesion layer selectively.
A method for fabricating a capacitor for an integrated circuit comprising the steps of:
- forming an adhesion layer of a metal over a substrate;
- forming a diffusion barrier layer of a compound of said metal and a non-metal on said adhesion layer by lamp-annealing a surface region of said adhesion layer in a gas of said non-metal so as to change said metal in said surface region to said compound;
- forming a bottom electrode layer of a noble metal on said diffusion barrier layer;
- forming a dielectric layer of a metal oxide on said bottom electrode layer;
- forming a top electrode layer of a conductive metal on said dielectric layer;
- etching said top electrode layer and dielectric layer selectively;
- etching said bottom electrode layer selectively;
- and
- etching said diffusion barrier layer and adhesion layer selectively.
A method for fabricating a capacitor for an integrated circuit comprising the steps of:
- forming an adhesion layer of a metal over a substrate:
- forming a diffusion barrier layer by annealing said adhesion layer in reactive ambient so as to change said metal to a compound of metal and non-metal;
- forming a bottom electrode layer of a noble metal on said diffusion barrier layer;
- forming a dielectric layer of a metal oxide on said electrode layer;
- forming a top electrode layer of a conductive metal on said dielectric layer;
- etching said top electrode layer and dielectric layer selectively;
- etching said bottom electrode layer selectively;
- and
- etching said diffusion layer selectively.
Dependencies are inferred from the claim text.