Semiconductor device and process for producing the same
AssigneeNEC Corporation
InventorsTakashi Yokoyama, Tatsuya Usami
Life of this patent
Estimating the term…
Abstract
An interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond or a Si-CH3 bond is formed on a substrate. Next, a photoresist is formed on the interlayer insulation film. The photoresist is then formed into a form of a contact hole. Thereafter, dry-etching of the interlayer insulation film is conducted by use of the photoresist as a mask. Subsequently, the photoresist is removed, and the interlayer insulation film is exposed to nitrogen plasma and hydrogen plasma, for example.
Claims14
A semiconductor device comprising:
- a semiconductor substrate,
- a wiring layer formed on said semiconductor substrate,
- a nitride film which covers said wiring layer, and
- an interlayer insulation film formed on said nitride film, said interlayer insulating film having an opening reaching said wiring layer and containing a dielectric component represented by a chemical formula having a Si—H bond.
A semiconductor device comprising;
- a semiconductor substrate,
- a wiring layer formed on said semiconductor substrate,
- a nitride film which covers said wiring layer, and
- an interlayer insulation film formed on said nitride film, said interlayer insulating film having an opening reaching said wiring layer and containing a dielectric component represented by a chemical formula having a Si—CH3 bond.
A process for producing a semiconductor device, comprising the steps of:
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to nitrogen plasma and hydrogen plasma.
A process for producing a semiconductor device, comprising the steps of:
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—CH, bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to nitrogen plasma and hydrogen plasma.
A process for producing a semiconductor device, comprising the steps of;
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to fluorine plasma.
A process for producing a semiconductor device, comprising the steps of:
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—CH3 bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to fluorine plasma.
A process for producing a semiconductor device, comprising the steps of:
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to hexamethyldisilaxane gas.
A process for producing a semiconductor device, comprising the steps of:
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—CH, bond on a semiconductor substrate,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a form of a contact hole,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to hexamethyldisilaxane gas.
A process for producing a semiconductor device, comprising the steps of:
- forming a wiring layer selectively on a semiconductor substrate,
- forming a nitrogen film on the entire surface,
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—H bond bond on said nitrogen film,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a shape having an opening on said wiring layer,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to fluorine plasma.
A process for producing a semiconductor device, comprising the steps of:
- forming a wiring layer selectively on a semiconductor substrate,
- forming a nitrogen film on the entire surface,
- forming an interlayer insulation film containing a dielectric component represented by a chemical formula having a Si—CH, bond on said nitrogen film,
- forming a photoresist on said interlayer insulation film,
- patterning said photoresist into a shape having an opening on said wiring layer,
- conducting dry-etching of said interlayer insulation film by use of said photoresist as a mask,
- removing said photoresist, and
- exposing said interlayer insulation film to fluorine plasma.
Dependencies are inferred from the claim text.