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US 2001/0019848 A1Published application
Process for fabrication of an all-epitaxial-oxide transistor
AssigneeInternational Business Machines Corporation
InventorsJames A. Misewich, Alejandro G. Schrott
Life of this patent
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Abstract
A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.
Claims23
A method of forming an integrated circuit chip having a transistor, said method comprising:
- forming a conductive oxide layer;
- forming a Mott transition oxide layer over said conductive oxide layer;
- and
- forming an insulative oxide layer over said Mott transition oxide layer.
1 more element
A method of forming a transistor comprising:
- forming a strontium ruthanate layer;
- forming a perovskite oxide layer over said strontium ruthanate layer;
- and
- forming an strontium titanate layer over said perovskite oxide layer.
1 more element
An integrated circuit chip having a transistor comprising:
- a conductive oxide layer;
- a Mott transition oxide layer over said conductive oxide layer;
- and
- an insulative oxide layer over said Mott transition oxide layer.
1 more element
Dependencies are inferred from the claim text.