Electronic structure comprising high and low voltage transistors, and a corresponding fabrication method
OwnerFederico Pio, Olivier Pizzutoinventors
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Abstract
A structure of electronic devices integrated in a semiconductor substrate with a first type of conductivity comprising at least a first HV transistor and at least a second LV transistor, each having a corresponding gate region. Said first HV transistor has lightly doped drain and source regions with a second type of conductivity, and said second LV transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the respective gate region and a second portion which is more heavily doped and comprises a silicide layer.
Claims9
A structure of electronic devices integrated in a semiconductor substrate having a first type of conductivity, the structure comprising a high voltage transistor and a low voltage transistor, each having a corresponding gate region, wherein said high voltage transistor has a drain region lightly doped with a second type of conductivity, and said low voltage transistor has respective drain and source regions with the second type of conductivity, each including a lightly doped portion adjacent to the gate region of said low voltage transistor and a second portion which is more heavily doped, wherein said second portion comprises a silicide layer.
A structure of electronic devices integrated in a semiconductor substrate having a first type of conductivity, the structure comprising:
- a high voltage transistor having gate, drain, and source regions, the drain being lightly doped with a second type of conductivity;
- and
- a low voltage transistor having gate, drain, and source regions, the drain and source regions of the low voltage transistor each having the second type of conductivity and each including a lightly doped portion adjacent to the gate region of the low voltage transistor and a second portion that is more heavily doped, wherein the gate, drain, and source regions of the low voltage transistor are each covered by a silicide layer.
Dependencies are inferred from the claim text.