US 2001/0019144 A1 · Thin-film capacitors and mehtods for forming the same

Abstract

An improved thin-film capacitor and methods for forming the same on a surface of a substrate are disclosed. The capacitor includes a bottom conducting plate formed by depositing conductive material within a trench of an insulating layer and planarizing the conducting and insulating layers. A dielectric film is then deposited on the substrate surface, such that at least a portion of the dielectric material remains over the bottom conducting plate. A second conductive layer is then deposited over the surface of the substrate, patterned and etched such that at least a portion of the second conducting material resides over at least a portion of the dielectric material.

Claims22

Dependent claims

A method for forming a capacitor on a surface of a substrate, the method comprising:

depositing a first insulating material on the surface of the substrate;
forming a trench within said insulating material;
depositing a first conductive material onto said first insulating material;
removing a portion of said conductive material to form a base plate such that the top surface of said first conductive and said first insulating material are substantially planar;
forming an insulating layer over said conductive material;
and
forming a top plate of a capacitor, wherein said top plate is formed by depositing a second conductive material and etching said second conductive material such that at least a portion of said second conductive material resides over said insulating layer.

4 more elements

Dependencies are inferred from the claim text.

Thin-film capacitors and mehtods for forming the same

Life of this patent

Thin-film capacitors and mehtods for forming the same

Life of this patent

Abstract

Claims22