Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a semiconductor substrate;
• a gate insulation film formed on the semiconductor substrate;
• a first conductive layer formed on the gate insulation film;
• a second conductive layer formed over the first conductive layer;
• a channel region formed under the gate insulation film;
• source and drain regions formed in the semiconductor substrate and being spaced apart from each other with said channel region being placed therebetween;
• a negative differential resistance located between the first conductive layer and the second conductive layer;
• and
• a load located between the first conductive layer and the source region.

A semiconductor device comprising:

• a semiconductor substrate;
• a gate insulation film formed on the semiconductor substrate;
• a first conductive layer formed on the gate insulation film;
• second and third conductive layers formed over the first conductive layer;
• a channel region formed under the gate insulation film;
• source and drain regions formed in the semiconductor substrate and being spaced apart from each other with said channel region being placed therebetween;
• a negative differential resistance located between the first conductive layer and the second conductive layer;
• and
• a load located between the first conductive layer and the third conductive layer.

A method of making a semiconductor device comprising:

• forming a gate insulation film on a semiconductor substrate;
• forming a first conductive layer on the gate insulation film;
• forming a second conductive layer over the first conductive layer;
• forming a channel region under the gate insulation film;
• forming source and drain regions in said semiconductor substrate, said source and drain regions being spaced apart from each other with said channel region being placed therebetween;
• providing a load between the first conductive layer and the second conductive layer;
• and
• providing a negative differential resistance between the first conductive layer and the source region.

A method of making a semiconductor device comprising:

• forming a gate insulation film on a semiconductor substrate;
• forming a first conductive layer on the gate insulation film;
• forming a second conductive layer over the first conductive layer;
• forming a channel region under the gate insulation film;
• forming source and drain regions in the semiconductor substrate, said source and drain regions being spaced apart from each other with said channel region being placed therebetween;
• providing a negative differential resistance between the first conductive layer and the second conductive layer;
• and
• providing a load between the first conductive layer and the source region.

A method of making a semiconductor device comprising:

• forming a gate insulation film on a semiconductor substrate;
• forming a first conductive layer on the gate insulation film;
• forming a second conductive layer over the first conductive layer;
• forming a channel region under the gate insulation film;
• forming source and drain regions in said semiconductor substrate, said source and drain regions being spaced apart from each other with said channel region being placed therebetween;
• providing a negative differential resistance between the first conductive layer and the second conductive layer;
• and
• providing a load between the first conductive layer and the third conductive layer.