Method of fabricating copper interconnecting line
AssigneeSamsung Electronics Co., Ltd.
InventorsJi-Soon Park, Soo-Geun Lee, Sun-Hoo Park
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Abstract
A method of fabricating a semiconductor device employing a multi-layer metal interconnect structure that has a copper (Cu) interconnection layer. Low-temperature plasma processing is first performed on the surface of the Cu interconnection layer, an insulation layer is deposited on the plasma-processed Cu interconnection layer, and the resultant structure is thermally treated.
Claims16
A method of fabricating a semiconductor device employing a multi-layer metal interconnect structure that has a copper (Cu) interconnection layer, comprising the steps of:
- performing low-temperature plasma processing on the surface of the Cu interconnection layer;
- forming a structure by depositing an insulation layer on the plasma-processed Cu interconnection layer;
- and
- thermally treating the structure.
A semiconductor device fabricating method comprising the steps of:
- depositing a first insulation layer on a semiconductor substrate;
- forming a first structure including a trench by etching the first insulation layer;
- forming a Cu interconnection layer by depositing a Cu layer on the first structure and removing the Cu layer from the surface of the first insulation layer;
- performing low-temperature plasma processing on the surface of the Cu interconnection layer at or below about 300° C.;
- forming a second structure by depositing a barrier layer on the plasma-processed Cu interconnection layer;
- thermally treating the second structure;
- depositing a second insulation layer on the barrier layer;
- and
- forming a via hole exposing the surface of the Cu interconnection layer by etching the second insulation layer.
Dependencies are inferred from the claim text.