Method for fabricating semiconductor device
OwnerKyeong Yoon IIIinventor
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Abstract
The present invention discloses a method for fabricating a semiconductor device which can form a MOSFET device according to a laser doping method. When junctions of the MOSFET device are formed, the MOSFET device has various junction depths by region, by using a doping difference according to the heat and time of a laser irradiation process. As compared with a two-dimensional method for controlling a property of the transistor by a channel width and length, the present invention provides a method for exercising three-dimensional control over the formation of transistors and other junctions in a semiconductor device.
Claims10
A method for fabricating a semiconductor device, comprising the steps of:
- melting a surface of a semiconductor substrate by performing a thermal treatment thereon;
- stacking a specific type impurity on the surface of the semiconductor substrate;
- and
- performing a doping process by melting the impurity on the semiconductor substrate by irradiating a laser into a presumed junction region of the semiconductor substrate, a junction depth being varied by controlling an energy and irradiation time of the laser.
A method of fabricating a semiconductor device, comprising the steps of:
- forming a semiconductor substrate;
- forming a layer of conductive material on the surface of the semiconductor substrate, the conductive material containing a concentration of dopant atoms;
- diffusing the dopant atoms into predetermined regions of the semiconductor substrate to form junction regions, each junction region being characterized by a junction depth, by exposing the semiconductor substrate to laser irradiation of predetermined energy and duration;
- and
- controlling the junction depth by one or more methods selected from the group consisting of
- adjusting the concentration of dopant atoms in the conductive material,
- controlling the thickness of the layer of conductive material,
- controlling the energy of the laser irradiation, and
- controlling the duration of the laser irradiation.
Dependencies are inferred from the claim text.