Semiconductor device manufacturing method and semiconductor device manufacturing by the same method
AssigneeNEC Corporation
InventorIchiro Yamamoto
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Abstract
A method for manufacturing a high dielectric constant insulating film made of a metal oxide on a silicon substrate is provided using a material gas mixture containing an oxidizing agent without forming a silicon oxide layer on a silicon substrate. The manufacturing method comprises the steps of placing the semiconductor substrate into a reaction chamber; introducing an organic metal material, oxidizing agent, and a material having a reducing action; and forming a high dielectric constant gate insulating film on said semiconductor substrate by a chemical reaction in the reaction chamber.
Claims11
A method for manufacturing a semiconductor device having a high dielectric constant gate insulating film made of a metal oxide formed on a silicon substrate comprising the steps of:
- placing a semiconductor substrate into a reaction chamber;
- introducing an organic metal material, an oxidizing agent, and a material having a reducing action;
- and
- forming a high dielectric constant gate insulating film on said semiconductor substrate by a chemical reaction in the reaction chamber.
A method for manufacturing a semiconductor device provided with a gate insulating film made of a metal oxide having a high dielectric constant, comprising the steps of:
- forming a plurality of active regions in an element separating region for forming a MIS-type semiconductor device in each active region;
- forming a high dielectric constant insulating film on a semiconductor substrate using a CVD method by a chemical reaction of an organic metal material containing a metal for forming a metal oxide, an oxidizing agent, and a material having the reducing action;
- patterning, after forming a conductive layer on said high dielectric constant insulating film, the high dielectric constant insulating film and the conductive layer for forming a gate insulating film made of the high dielectric constant insulating film and a gate electrode made of the conductive layer;
- and
- forming MIS-type transistors by forming a source and drain regions by ion implantation of a desired conductivity type impurity into said active regions using each gate electrode as a mask.
A semiconductor device, in which a plurality of active regions define an element separating region formed in a semiconductor substrate and each active region has a high dielectric constant gate insulating film made of a metal oxide, comprising:
- said high dielectric constant gate insulating film which is is constituted by a high dielectric constant insulating film formed by a chemical reaction of an organic metal material including a metal for forming a metal oxide, an oxidizing agent, and a material having a reducing action.
Dependencies are inferred from the claim text.