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OwnerToshiharu Furukawa, Mark C. Hakey +4inventors
InventorsToshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, Thomas S. Kanarsky, Jeffrey J. Welser
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A dynamic random access memory device formed in a substrate having a trench. The trench has a side wall, a top, a lower portion, and a circumference. The device includes a signal storage node including a storage node conductor formed in the lower portion of the trench and isolated from the side wall by a node dielectric and a collar oxide above the node dielectric. A buried strap is coupled to the storage node conductor and contacts a portion of the side wall of the trench above the collar oxide. A trench-top dielectric which is formed upon the buried strap has a trench-top dielectric thickness. A signal transfer device includes a first diffusion region extending into the substrate adjacent the portion of the trench side wall contacted by the buried strap, a gate insulator having a gate insulator thickness formed on the trench side wall above the first buried strap, wherein the gate insulator thickness is less than the trench-top dielectric thickness, and a gate conductor formed within the trench upon the trench-top dielectric and adjacent the gate insulator.
A dynamic random access memory device comprising:
A process of manufacturing a dynamic random access memory device in a substrate comprising the steps of:
A process of manufacturing a dynamic random access memory device in a substrate comprising the steps of:
A process of manufacturing a dynamic random access memory device in a substrate comprising the steps of:
Dependencies are inferred from the claim text.