Method for fabricating a nonvolatile dram memory cell
OwnerWalter Hartner, Marcus Kastner +1inventors
InventorsWalter Hartner, Marcus Kastner, Gunther Schindler
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Abstract
When fabricating a DRAM memory cell with a switching transistor and a storage capacitor containing a ferroelectric dielectric and platinum electrodes, a conductive protective layer is applied to the upper electrode at least in the region of a contact opening formed in an insulation layer, so that tungsten can be filled into the contact opening with a chemical vapor deposition in an H2 atmosphere without the dielectric being reduced by the hydrogen under the catalytic action of the platinum. A semiconductor component is also provided.
Claims42
A method for fabricating a semiconductor component, the method which comprises:
- forming a switching transistor on a semiconductor substrate;
- applying a first insulation layer on the switching transistor;
- forming a storage capacitor on the first insulation layer such that the storage capacitor is coupled to the switching transistor, the storage capacitor including a lower electrode, an upper electrode and a metal-oxide-containing layer disposed between the lower electrode and the upper electrode, the lower electrode and the upper electrode containing a material selected from the group consisting of a platinum metal and a conductive oxide of a platinum metal;
- applying a second insulation layer on the storage capacitor;
- forming a contact opening in the second insulation layer for providing an electrical contact between the upper electrode and an outer contact connection;
- subsequently applying, in the contact opening, a conductive protective layer on the upper electrode;
- and
- subsequently filling the contact opening with tungsten by using a chemical vapor deposition in a hydrogen atmosphere.
A method for fabricating a semiconductor component, the method which comprises:
- forming a switching transistor on a semiconductor substrate;
- applying a first insulation layer on the switching transistor;
- forming a storage capacitor on the first insulation layer such that the storage capacitor is coupled to the switching transistor, the storage capacitor including a lower electrode, an upper electrode and a metal-oxide-containing layer disposed between the lower electrode and the upper electrode, the lower electrode and the upper electrode containing a material selected from the group consisting of a platinum metal and a conductive oxide of a platinum metal;
- applying a conductive protective layer at least in a given region of the upper electrode;
- subsequently applying a second insulation layer on the storage capacitor;
- forming, at the given region of the upper electrode, a contact opening in the second insulation layer for providing an electrical contact between the upper electrode and an outer contact connection;
- after the steps of applying the second insulation layer and forming the contact opening, filling the contact opening with tungsten by using a chemical vapor deposition in a hydrogen atmosphere.
A semiconductor component, comprising:
- a semiconductor substrate;
- switching transistor formed on said semiconductor substrate;
- a first insulation layer disposed on said switching transistor;
- a storage capacitor formed on said first insulation layer, said storage capacitor being coupled to said switching transistor and including a lower electrode, an upper electrode and a metal-oxide-containing layer disposed between said lower electrode and said upper electrode;
- said lower and upper electrodes of said storage capacitor containing a material selected from the group consisting of a platinum metal and a conductive platinum metal oxide;
- a second insulation layer disposed on said storage capacitor;
- said second insulation layer being formed with a contact opening and tungsten filling said contact opening;
- a conductive protective layer disposed in said contact opening and at least on said upper electrode;
- and
- an outer contact connection electrically contacting said upper electrode.
Dependencies are inferred from the claim text.