Back to results
US 2001/0018168 A1Published application
Resist development method
AssigneeNEC Corporation
InventorsNobue Kosa, Yuji Shimizu
Life of this patent
Estimating the term…
Abstract
The resist development method of the present invention includes a step of applying a resist film to a wafer substrate, a step of exposing the resist film in a prescribed pattern, a step of removing the exposed part of the resist film with an alkaline liquid, and a step of cleaning the patterned resist film with ozone water.
Claims5
A resist development method, comprising the steps of:
- applying a resist film to a wafer substrate, exposing said resist film in a prescribed pattern, removing the exposed part of said resist film with an alkaline liquid, and cleaning said patterned resist film with ozone water.
Dependencies are inferred from the claim text.