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AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsAtsuko Fujino, Teruhiko Kumada, Atsushi Oshida, Koji Tange, Hitoshi Fukuma
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By using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an α-methyl styrene compound and an α-chloroacrylate ester compound as a base resin, there is provided a developing process and a process for forming a pattern (according to GHOST method in particular) which are used for preparing an excellent resist pattern profile, a process for preparing a photomask and a process for preparing a semiconductor device.
A developing process comprising using a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxy group, and a dicarboxylate ester having 3 to 8 carbon atoms for developing a positive-type radiation resist containing a copolymer of an α-methyl styrene compound and an α-chloroacrylate ester compound as a base resin.
A process for forming a pattern using a positive-type radiation resist containing a copolymer of an α-methyl styrene compound and an α-chloroacrylate ester compound as a base resin, wherein a developer consisting essentially of one organic solvent selected from the group consisting of a ketone having 3 to 8 carbon atoms, a carboxylate ester having 3 to 8 carbon atoms, which may have an alkoxyl group, and a dicarboxylate ester having 3 to 8 carbon atoms is used.
A process for preparing a semiconductor device comprising
Dependencies are inferred from the claim text.