Magnetoresistive effect film, mangetoresistive effect sensor utilizing the same and magnetic storage device

A magnetoresistive effect sensor comprising:

• a substrate,
• a lower shield layer,
• a lower gap layer and
• a magnetoresistive effect film of a stacked film consisted of a substrate, an buffer layer, a NiFe layer, a non-magnetic layer, a fixed magnetic layer, and an anti-ferromagnetic layer, and a crystal grain size of said stacked film being greater than or equal to 8 nm and less than or equal to a total layer thickness of said stacked layer excluding said substrate and said buffer layer,
• said lower shield layer and said magnetoresistive effect film being patterned;
• a longitudinal bias layer and a lower electrode layer being stacked at a position contacting with at least an end portion of said magnetoresistive effect film, in sequential order, and
• an upper gap layer and an upper field being stacked on said longitudinal bias layer and said lower electrode layer in sequential order.

A magnetoresistive effect sensor comprising:

• a substrate,
• a lower shield layer,
• a lower gap layer and
• a magnetoresistive effect film of a stacked film consisted of a substrate, an buffer layer, a NiFe layer, a non-magnetic layer, a fixed magnetic layer, and an anti-ferromagnetic layer, and a crystal grain size of said stacked film being greater than or equal to 8 nm and less than or equal to a total layer thickness of said stacked layer excluding said substrate and said buffer layer,
• said lower shield layer and said magnetoresistive effect film being patterned;
• a longitudinal bias layer and a lower electrode layer being stacked at a position overlapping with a part of said magnetoresistive effect film, in sequential order, and
• an upper gap layer and an upper field being stacked on said longitudinal bias layer and said lower electrode layer in sequential order.

A magnetic storage device comprising:

• a magnetic storage medium;
• a magnetic head for recording and reproducing data in and from sad magnetic storage medium;
• a positioning mechanism for positioning said magnetic head on a predetermined track of said magnetic storage medium;
• and
• a control portion controlling respective components of said magnetic storage device, and
• said magnetic head including a magnetoresistive effect sensor comprising a substrate, a lower shield layer, a lower gap layer and a magnetoresistive effect film of a stacked film consisted of a substrate, an buffer layer, a NiFe layer, a non-magnetic layer, a fixed magnetic layer, and an anti-ferromagnetic layer, and a crystal grain size of said stacked film being greater than or equal to 8 nm and less than or equal to a total layer thickness of said stacked layer excluding said substrate and said buffer layer, said lower shield layer and said magnetoresistive effect film being patterned, a longitudinal bias layer and a lower electrode layer being stacked at a position contacting with at least an end portion of said magnetoresistive effect film, in sequential order, and an upper gap layer and an upper field being stacked on said longitudinal bias layer and said lower electrode layer in sequential order.

A magnetic storage device comprising:

• a magnetic storage medium;
• a magnetic head for recording and reproducing data in and from sad magnetic storage medium;
• a positioning mechanism for positioning said magnetic head on a predetermined track of said magnetic storage medium;
• and
• a control portion controlling respective components of said magnetic storage device, and
• said magnetic head including a magnetoresistive effect sensor comprising a substrate, a lower shield layer, a lower gap layer and a magnetoresistive effect film of a stacked film consisted of a substrate, an buffer layer, a NiFe layer, a non-magnetic layer, a fixed magnetic layer, and an anti-ferromagnetic layer, and a crystal grain size of said stacked film being greater than or equal to 8 nm and less than or equal to a total layer thickness of said stacked layer excluding said substrate and said buffer layer, said lower shield layer and said magnetoresistive effect film being patterned, a longitudinal bias layer and a lower electrode layer being stacked at a position overlapping with a part of said magnetoresistive effect film, in sequential order, and an upper gap layer and an upper field being stacked on said longitudinal bias layer and said lower electrode layer in sequential order.