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US 2001/0017388 A1Published application
Semiconductor device and method of manufacturing same
AssigneeU.S. Philips Corporation
InventorYouri Ponomarev
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AssigneeU.S. Philips Corporation
InventorYouri Ponomarev
Estimating the term…
The semiconductor device has a semiconductor body (1) having a field effect transistor (4) at a first surface (2) and a second gate (10) at a second surface (3). The second gate is present in a recess (11) in the semiconductor body (1) which is accurately aligned with a first gate (8) of the field effect transistor (4) on the first surface (2). The method of manufacturing the semiconductor device comprises the step of implanting ions into a semiconductor body (1) which has a first gate (8) on a first surface (2) and a silicon oxide layer (17) on a second surface (3). The implantation is done from the first surface (2) in a direction substantially perpendicular to that surface. The implantation has the effect that behind the first gate (8) an implanted region (18) is formed in the semiconductor body (1) and a circumferential implanted zone (19) in the silicon oxide layer (17). Silicon oxide is formed in the implanted region (18) by dopant-enhanced oxidation. The silicon oxide layer (17) and the silicon oxide in the region (18) are removed so as to form a recess (11), which is filled with second gate material (20) from which the second gate (10) is formed. The second gate is effective in suppressing short-channel effects.
A semiconductor device with a silicon semiconductor body (1) having a first surface (2) and a second surface (3) facing away from the first, provided with a field effect transistor (4) comprising a source (5), a drain (6), an interposed channel (7), and a first gate (8) arranged opposite the channel (7) on the first surface (2), said gate (8) having a dimension (9) along said first surface (2), and provided with a second gate (10) provided on the second surface (3) opposite the first gate (8), characterized in that the semiconductor body (1) has a recess (11) with a depth (12) in the second surface (3), which recess (11) is concentric with a substantially perpendicular projection of the first gate (8), and in which recess (11) the second gate (10) is present.
A method of manufacturing a semiconductor device with a silicon semiconductor body (1) having a first surface (2) and a second surface (3) facing away from the first, and provided with a field effect transistor (4) comprising a source (5), a drain (6), an interposed channel (7), and a first gate (8) provided on the first surface (3) opposite the channel (7), and a second gate (10) of a second gate material provided on the second surface (3) opposite the channel, characterized in that the semiconductor body (1) with the first gate (8) on the first surface (2) and a silicon oxide layer (17) on the second surface (3) is implanted with dopant ions in a direction substantially perpendicular to the first surface (2) and through the first surface (2) so as to form an implanted region (18) behind the first gate (8) in the silicon semiconductor body (1) and an implanted zone (19) in the silicon oxide layer (17) around said region (18), whereupon silicon oxide is formed by dopant-enhanced oxidation in the implanted region (18) and the silicon oxide in said region and the silicon oxide layer (17) are removed, such that a recess (11) is created in the second surface (3) at the area of said region (18), and the second gate material (20) is provided in the recess (11), from which material the second gate (10) is formed.
Dependencies are inferred from the claim text.