Method of manufacturing semiconductor device having ferro-dielectric material film
AssigneeFujitsu Limited
InventorsYoshikazu Kato, Koji Tani, Takanori Hashimoto
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Abstract
A reaction byproduct which is generated when a ferro-dielectric material film is etched is removed without giving adverse effect on the semiconductor element. After the etching of the ferro-dielectric material film, a wetting process may performed using an aqueous solution of phosphoric acid. After the ferro-dielectric material film is etched using the resist as the mask, the wetting process is also performed using the aqueous solution of phosphoric acid before and after the ashing of resist.
Claims11
A method of manufacturing a semiconductor device having a ferro-dielectric material film, comprising the steps of:
- forming a ferro-dielectric material film above a semiconductor substrate;
- etching said ferro-dielectric material film;
- and
- wetting, after said etching process, said semiconductor substrate with aqueous solution of phosphoric acid.
Dependencies are inferred from the claim text.