Enhanced plasma mode and system for plasma immersion ion implantation

A plasma immersion ion implantation (PIII) source, said source comprising:

• a vacuum chamber;
• a susceptor disposed within an interior region in said chamber, said susceptor being adapted to secure a work piece thereon;
• an rf source disposed overlying said susceptor in said chamber, said rf source providing an inductive discharge to form a plasma from a gas within said chamber;
• and
• a first electro-magnetic source disposed surrounding an upper portion of said chamber, said first magnetic source providing a first cusp region of said plasma toward said rf source.

A method for producing a substantially pure monatomic ion species in a plasma in a chamber for plasma immersion ion implantation (PIII), the method comprising:

• providing an inductive discharge to form a plasma from a gas within said chamber;
• providing a first set of focused magnetic field lines within the chamber that form a first cusp proximate a first end of the chamber;
• and
• providing a second set of focused magnetic field lines within the chamber that form a second cusp proximate a second end of the chamber, wherein the first and second sets of magnetic field lines interact to form a third cusp intermediate the first and second cusps.