Method for reforming base surface, method for manufacturing semiconductor device and equipment for manufacturing the same
AssigneeSemiconductor Process Laboratory Co., Ltd.
InventorKAZUO MAEDA
Life of this patent
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Abstract
The present invention relates to a method for reforming a surface of a base layer before thin film deposition, wherein a base thermal SiO2 film 1a is exposed to any gas for reforming the surface of the base layer selected from the group consisting of AX4, AHnCl4−n and ARnX4−n, (in which, a represents any one selected from the group consisting of Si, Ge and Sn, X represents any one selected from the group consisting of I, Br, F and Cl and R represents any one of CmH2m+1, and an accompanying character “n” is any one of 1, 2 or 3 and an accompanying character “m” is a natural number).
Claims13
An equipment for manufacturing semiconductor device comprising:
- a reaction chamber for reforming a surface of a base layer further to deposit a film on the surface of the base layer after the reform;
- a holding table for holding said base layer, said holding table being provided in said reaction chamber;
- a reforming gas supply means for supplying any gas for reforming the surface of the base layer in any one selected from the group consisting of AX4, AHnCl4−n and ARnX4−n (in which, a represents any one selected from the group consisting of Si, Ge and Sn, X represents any one selected from the group consisting of I, Br, F and Cl and R represents any one of CmH2m+1, and an accompanying character “n” is any one of 1, 2 or 3 and an accompanying character “m” is a natural number) into said reaction chamber;
- a supply means of the gas for thin film deposition for supplying said gases for thin film deposition into said reaction chamber;
- and
- a selection means for selecting a supply of the gas of any one of said gases for reforming the base layer surface and said gases for thin film deposition into said reaction chamber.
A method for reforming a base surface, wherein a surface of a base layer is exposed to any gas for reforming the surface of the base layer in any one selected from the group consisting of AX4, AHnCl4−n and ARnX4−n (in which, a represents any one selected from the group consisting of Si, Ge and Sn, X represents any one selected from the group consisting of I, Br, F and Cl, and R represents any one of CmH2m+1, and an accompanying character “n” is any one of 1, 2 or 3 and an accompanying character “m” is a natural number).
Dependencies are inferred from the claim text.