US 2001/0012689 A1 · INTERCONNECT STRUCTURE WITH SILICON CONTAINING ALICYCLIC POLYMERS AND LOW-K DIELETRIC MATERIALS AND METHOD OF MAKING SAME WITH SINGLE AND DUAL DAMASCENE TECHNIQUES

Abstract

A damascene structure and method of making the same in a low k dielectric material employs an imageable layer in which the damascene pattern is provided. The imageable layer is an alicyclic polymer into which silicon is incorporated by liquid silylation, for example. The silicon-rich regions are converted upon exposure to the plasma etch that etches the low k dielectric material into a hard mask containing silicon dioxide, for example. The low k dielectric material is protected from further etching by the mask thus created.

Claims20

Dependent claims

A method of forming a damascene structure in a semiconductor device, comprising the steps of:

forming a first low k dielectric layer;
depositing an imageable layer on the first low k dielectric layer;
patterning the first imageable layer to create a pattern with an opening in the imageable layer;
incorporating silicon in the pattern of the first imageable layer;
converting at least a portion of the first imageable layer with incorporated silicon into a hard mask positioned to protect the first low k dielectric layer;
and
etching the first low k dielectric layer through the opening, the hard mask protecting the first low k dielectric layer from being etched except through the opening.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

09/204,166Filed 3 Dec 1998

Published

9 Aug 2001

Term ends

Not estimatedThe source records don’t support an estimate.

Classification14 codes

H10P 14/6534
Of treatments performed after formation of the materials: by exposure to a liquid
H10P 14/6342
Deposition processes: liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
H10P 14/6518
Of treatments performed after formation of the materials: by introduction of substances into an already-existing insulating layer
H10P 14/6546
Of treatments performed after formation of the materials: to change the surface groups of the insulating materials

Interconnect structure with silicon containing alicyclic polymers and low-k dieletric materials and method of making same with single and dual damascene techniques

Life of this patent

Interconnect structure with silicon containing alicyclic polymers and low-k dieletric materials and method of making same with single and dual damascene techniques

Life of this patent

Abstract

Claims20