Method of activating compound semiconductor layer to p-type compound semiconductor layer
AssigneeSamsung Electronics Co., Ltd.
InventorHyun-Eoi Shin
Life of this patent
Estimating the term…
Abstract
A method of activating a compound semiconductor layer into a p-type compound semiconductor layer is provided. In order to reduce the electrical conductivity of the compound semiconductor layer grown by a VPE method, electromagnetic waves having energy larger than the band gap of the compound semiconductor layer are irradiated and annealing is performed. If the amount of the p-type impurities contained in the layer during growth thereof increases, the resistivity of the layer increases and an annealing temperature is lowered. Also, the contact resistance between the compound semiconductor layer and an electrode is reduced.
Claims18
A method of manufacturing a compound semiconductor device having at least (1) a compound semiconductor layer grown by a vapor phase epitaxy (VPE) method and doped with p-type impurities, and (2) an electrode, comprising activating the compound semiconductor layer into a p-type compound semiconductor layer, by irradiating electromagnetic waves that can be absorbed into the p-type impurity doped compound semiconductor layer, onto the p-type impurity doped compound semiconductor layer.
A method of manufacturing a compound semiconductor device having at least (1) a compound semiconductor layer grown by a vapor phase epitaxy (VPE) method and doped with p-type impurities, and (2) an electrode, comprising activating the compound semiconductor layer into a p-type compound semiconductor layer by annealing the p-type semiconductor layer at a temperature of 200-850° C., wherein the p-type impurity-doped semiconductor layer contains more than 5×1019 cm−3 of Mg as p-type impurities.
A method of manufacturing a compound semiconductor device having at least (1) a compound semiconductor layer grown by a vapor phase epitaxy (VPE) method and doped with p-type impurities, and (2) an electrode, comprising reducing the contact resistance of the compound semiconductor layer, by doping the p-type impurities into the compound semiconductor layer, in an amount of more than two times of the amount required when the resistivity of the p-type impurity-doped compound semiconductor layer is the lowest.
Dependencies are inferred from the claim text.